Image sensor including color separating lens array and electronic device including the image sensor

ABSTRACT

Provided is an image sensor including a sensor substrate including a first photosensitive cell and a second photosensitive cell which are configured to sense light incident on the sensor substrate, a color separating lens array configured to change a phase of first wavelength light and a phase of second wavelength light such that the first wavelength light travels to the first photosensitive cell and the second wavelength light travels to the second photosensitive cell, and a spectrum shaping layer including a plurality of nanostructures respectively having a first refractive index, and a dielectric material provided between the plurality of nanostructures and having a second refractive index, the spectrum shaping layer being provided between the sensor substrate and the color separating lens array and configured to shape a spectral profile of the light incident on the sensor substrate by reflecting and/or absorbing portion of light passing through the color separating lens array.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based on and claims priority under 35 U.S.C. § 119to Korean Patent Application No. 10-2020-0143871, filed on Oct. 30,2020, and Korean Patent Application No. 10-2021-0083122, filed on Jun.25, 2021, in the Korean Intellectual Property Office, the disclosures ofwhich are incorporated by reference herein in their entireties.

BACKGROUND 1. Field

Example embodiments of the present disclosure relate to an image sensorincluding a color separating lens array capable of condensing incidentlight separately according to wavelengths of the incident light, and anelectronic device including the image sensor.

2. Description of Related Art

Image sensors generally sense the color of incident light by using acolor filter. However, a color filter may have low light utilizationefficiency because the color filter absorbs light of colors other thanthe corresponding color of light. For example, when a red-green-blue(RGB) color filter is used, only ⅓ of the incident light is transmittedand the other, that is, ⅔ of the incident light, is absorbed, and thus,the light utilization efficiency is only about 33%. Thus, in a colordisplay apparatus or a color image sensor, most light loss occurs in thecolor filter.

SUMMARY

One or more example embodiments provide image sensors having improvedlight utilization efficiency and color reproducibility by using a colorseparating lens array capable of condensing incident light separatelyaccording to wavelengths of the incident light and a spectrum shapinglayer shaping a spectrum distribution for each color and electronicdevices including the image sensors.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of example embodiments of the disclosure.

According to an aspect of an example embodiment, there is provided animage sensor including a sensor substrate including a firstphotosensitive cell and a second photosensitive cell which areconfigured to sense light incident on the sensor substrate, a colorseparating lens array configured to change a phase of first wavelengthlight and a phase of second wavelength light different from each othersuch that the first wavelength light included in light incident on thecolor separating lens array travels to the first photosensitive cell andthe second wavelength light included in the light incident on the colorseparating lens array travels to the second photosensitive cell, and aspectrum shaping layer including a plurality of nanostructuresrespectively having a first refractive index, and a dielectric materialprovided between the plurality of nanostructures and having a secondrefractive index, the spectrum shaping layer is provided between thesensor substrate and the color separating lens array and configured toshape a spectral profile of the light incident on the sensor substrateby reflecting and/or absorbing portion of light passing through thecolor separating lens array.

A thickness of the color separating lens array may be 3 to 50 timeslarger than a thickness of the spectrum shaping layer.

A thickness of the color separating lens array may be 500 nm to 1500 nm,and a thickness of the spectrum shaping layer is 30 nm to 160 nm.

The spectrum shaping layer may include a first shaper provided on thefirst photosensitive cell, and the first shaper may have a transmittanceless than 0.5 with respect to light having a wavelength equal to or lessthan 450 nm, and the first shaper may have a transmittance equal to ormore than 0.5 with respect to light having a wavelength equal to or morethan 500 nm.

The spectrum shaping layer may include a second shaper provided on thesecond photosensitive cell, and the second shaper may have atransmittance lower than 0.5 with respect to light having a wavelengthof 650 nm, and the second shaper may have a transmittance of equal to ormore than 0.5 with respect to light having a wavelength equal to or lessthan 610 nm.

The spectrum shaping layer may include a first shaper provided on thefirst photosensitive cell and a second shaper disposed on the secondphotosensitive cell, and the first shaper may include a plurality offirst nanostructures having a first cross-sectional area, and the secondshaper may include a plurality of second nanostructures having a secondcross-sectional area that is larger than the first cross-sectional area.

Each of the plurality of first nanostructures and each of the pluralityof second nanostructures may have a cylinder shape or a square pillarshape.

The second cross-sectional area may be 4 to 10 times larger than thefirst cross-sectional area.

The spectrum shaping layer may include a first shaper provided on thefirst photosensitive cell and a second shaper disposed on the secondphotosensitive cell, and the first shaper may include a plurality offirst nanostructures disposed at a first pitch, and the second shapermay include a plurality of second nanostructures disposed at a secondpitch.

The second pitch may be 2 to 6 times larger than the first pitch.

The sensor substrate may further include a third photosensitive cell anda fourth photosensitive cell sensing light, and the color separatinglens array may be configured to change the phase of the first wavelengthlight, the phase of the second wavelength light, and the phase of thethird wavelength light different from each other such that the firstwavelength light travels to the first photosensitive cell and the fourthphotosensitive cell and the third wavelength light travels to the thirdphotosensitive cell.

The spectrum shaping layer may include a third shaper provided on thethird photosensitive cell, and the third shaper may have a transmittancelower than 0.5 with respect to light having a wavelength equal to orless than 500 nm, and the third shaper may have a transmittance equal toor more than 0.5 with respect to light having a wavelength equal to ormore than 600 nm.

The spectrum shaping layer may include a first shaper provided on thefirst photosensitive cell and the fourth photosensitive cell, a secondshaper provided on the second photosensitive cell, and a third shaperprovided on the third photosensitive cell, and the first shaper mayinclude a plurality of first nanostructures respectively having a firstcross-sectional area, the second shaper may include a plurality ofsecond nanostructures respectively having a second cross-sectional areathat is larger than the first cross-sectional area, and the third shapermay include a plurality of third nanostructures respectively having athird cross-sectional area that is larger than the first cross-sectionalarea and less than the second cross-sectional area.

Each of the plurality of first nanostructures, each of the plurality ofsecond nanostructures, and each of the plurality of third nanostructuresmay have a cylinder shape or a square pillar shape.

The spectrum shaping layer may include a first shaper provided on thefirst photosensitive cell and the fourth photosensitive cell, a secondshaper provided on the second photosensitive cell, and a third shaperprovided on the third photosensitive cell, and the first shaper mayinclude a plurality of first nanostructures disposed at a first pitch,the second shaper may include a plurality of second nanostructuresdisposed at a second pitch that is larger than the first pitch, and thethird shaper may include a plurality of third nanostructures disposed ata third pitch that is larger than the first pitch and less than thesecond pitch.

A ratio of light sensed by the second photosensitive cell may be equalto or more than 85% with respect to light having a wavelength of 450 nmthat is sensed by the sensor substrate.

A ratio of light sensed by the third photosensitive cell may be equal toor more than 60% with respect to light having a wavelength of 640 nmthat is sensed by the sensor substrate.

The image sensor may further include an optical filter layer provided onthe color separating lens array and configured to block infrared orultraviolet light among the light incident on the color separating lensarray.

The optical filter layer may include a first filter layer having a firstrefractive index and a second filter layer having a second refractiveindex, the second filter layer being provided on the first filter layer.

A transmission area ratio of the spectrum shaping layer may be 40% to90% with respect to light of a wavelength of 400 nm to 700 nm.

A transmission area ratio of the spectrum shaping layer may be 50% to80% with respect to light of a wavelength of 400 nm to 700 nm.

The spectrum shaping layer may include a first shaper provided on thefirst photosensitive cell, and a transmission area ratio of the firstshaper may be 50% to 80% with respect to light of a wavelength of 400 nmto 700 nm.

According to another aspect of an example embodiment, there is providedan electronic device including an image sensor configured to convert anoptical image into an electrical signal, and a processor configured tocontrol an operation of the image sensor, and store and output a signalgenerated by the image sensor, wherein the image sensor may include asensor substrate including a first photosensitive cell and a secondphotosensitive cell which are configured to sense light incident on thesensor substrate, a color separating lens array configured to change aphase of first wavelength light and a phase of second wavelength lightdifferent from each other such that the first wavelength light includedin light incident on the color separating lens array travels to thefirst photosensitive cell and the second wavelength light included inthe light incident on the color separating lens array travels to thesecond photosensitive cell, and a spectrum shaping layer including aplurality of nanostructures respectively having a first refractive indexand a dielectric material provided between the plurality ofnanostructures and respectively having a second refractive index, thespectrum shaping layer being provided between the sensor substrate andthe color separating lens array and configured to shape a spectralprofile of the light incident on the sensor substrate by reflectingand/or absorbing portion of light passing through the color separatinglens array.

A thickness of the color separating lens array may be 3 to 50 timeslarger than a thickness of the spectrum shaping layer.

A thickness of the color separating lens array may be 500 nm to 1500 nm,and a thickness of the spectrum shaping layer is 30 nm to 160 nm.

The spectrum shaping layer may include a first shaper provided on thefirst photosensitive cell, and the first shaper may have a transmittanceless than 0.5 with respect to light having a wavelength equal to or lessthan 450 nm, and the first shaper may have a transmittance equal to ormore than 0.5 with respect to light having a wavelength equal to or morethan 500 nm.

The spectrum shaping layer may include a second shaper provided on thesecond photosensitive cell, and the second shaper may have atransmittance lower than 0.5 with respect to light having a wavelengthof 650 nm, and the second shaper may have a transmittance of equal to ormore than 0.5 with respect to light having a wavelength equal to or lessthan 610 nm.

The spectrum shaping layer may include a first shaper provided on thefirst photosensitive cell and a second shaper provided on the secondphotosensitive cell, and the first shaper may include a plurality offirst nanostructures respectively having a first cross-sectional area,and the second shaper may include a plurality of second nanostructuresrespectively having a second cross-sectional area that is larger thanthe first cross-sectional area.

Each of the plurality of first nanostructures and each of the pluralityof second nanostructures may have a cylinder shape or a square pillarshape.

The second cross-sectional area may be 4 to 10 times larger than thefirst cross-sectional area.

The spectrum shaping layer may include a first shaper provided on thefirst photosensitive cell and a second shaper provided on the secondphotosensitive cell, and the first shaper may include a plurality offirst nanostructures disposed at a first pitch, and the second shapermay include a plurality of second nanostructures disposed at a secondpitch.

The second pitch may be 2 to 6 times larger than the first pitch.

The sensor substrate may further include a third photosensitive cell anda fourth photosensitive cell sensing light, and the color separatinglens array may be configured to change the phase of the first wavelengthlight, the phase of the second wavelength light, and the phase of thethird wavelength light different from each other such that the firstwavelength light travels to the first photosensitive cell and the fourthphotosensitive cell and the third wavelength light travels to the thirdphotosensitive cell.

The spectrum shaping layer may include a third shaper provided on thethird photosensitive cell, and the third shaper may have a transmittancelower than 0.5 with respect to light having a wavelength equal to orless than 500 nm, and the third shaper may have a transmittance equal toor more than 0.5 with respect to light having a wavelength equal to ormore than 600 nm.

The spectrum shaping layer may include a first shaper provided on thefirst photosensitive cell and the fourth photosensitive cell, a secondshaper provided on the second photosensitive cell, and a third shaperprovided on the third photosensitive cell, and the first shaper mayinclude a plurality of first nanostructures respectively having a firstcross-sectional area, the second shaper may include a plurality ofsecond nanostructures respectively having a second cross-sectional areathat is larger than the first cross-sectional area, and the third shapermay include a plurality of third nanostructures respectively having athird cross-sectional area that is larger than the first cross-sectionalarea and less than the second cross-sectional area.

Each of the plurality of first nanostructures, each of the plurality ofsecond nanostructures, and each of the plurality of third nanostructuresmay have a cylinder shape or a square pillar shape.

The spectrum shaping layer may include a first shaper provided on thefirst photosensitive cell and the fourth photosensitive cell, a secondshaper provided on the second photosensitive cell, and a third shaperprovided on the third photosensitive cell, and the first shaper mayinclude a plurality of first nanostructures disposed at a first pitch,the second shaper may include a plurality of second nanostructuresdisposed at a second pitch that is larger than the first pitch, and thethird shaper may include a plurality of third nanostructures disposed ata third pitch that is larger than the first pitch and less than thesecond pitch.

A ratio of light sensed by the second photosensitive cell may be equalto or more than 85% with respect to light having a wavelength of 450 nmthat is sensed by the sensor substrate.

A ratio of light sensed by the third photosensitive cell may be equal toor more than 60% with respect to light having a wavelength of 640 nmthat is sensed by the sensor substrate.

The electronic device may further include an optical filter layerprovided on the color separating lens array and configured to blockinfrared or ultraviolet light among the light incident on the colorseparating lens array.

The optical filter layer may include a first filter layer having a firstrefractive index and a second filter layer having a second refractiveindex, the second filter layer being provided on the first filter layer.

A transmission area ratio of the spectrum shaping layer may be 40% to90% with respect to light of a wavelength of 400 nm to 700 nm.

A transmission area ratio of the spectrum shaping layer may be 50% to80% with respect to light of a wavelength of 400 nm to 700 nm.

The spectrum shaping layer may include a first shaper provided on thefirst photosensitive cell, and a transmission area ratio of the firstshaper may be 50% to 80% with respect to light of a wavelength of 400 nmto 700 nm.

According to another aspect of an example embodiment, there is providedan image sensor including a sensor substrate including a firstphotosensitive cell and a second photosensitive cell which areconfigured to sense light incident on the sensor substrate, a colorseparating lens array configured to change a phase of first wavelengthlight and a phase of second wavelength light different from each othersuch that the first wavelength light included in light incident on thecolor separating lens array travels to the first photosensitive cell andthe second wavelength light included in the light incident on the colorseparating lens array travels to the second photosensitive cell, aspectrum shaping layer including a plurality of nanostructures thatrespectively has a first refractive index and a dielectric materialdisposed between the plurality of nanostructures and respectively havinga second refractive index, the spectrum shaping layer being disposedbetween the sensor substrate and the color separating lens array andconfigured to shape a spectral profile of the light incident on thesensor substrate by reflecting and/or absorbing portion of light passingthrough the color separating lens array, and an optical filter layerdisposed on the color separating lens array, the optical filter layerbeing configured to block infrared or ultraviolet light among the lightincident on the color separating lens array, wherein a thickness of thecolor separating lens array is greater than a thickness of the spectrumshaping layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and/or other aspects, features, and advantages of certainexample embodiments of the disclosure will be more apparent from thefollowing description taken in conjunction with the accompanyingdrawings, in which:

FIG. 1 is a block diagram of an image sensor according to an exampleembodiment;

FIGS. 2A, 2B, and 2C are diagrams showing various pixel arrangements ina pixel array of an image sensor;

FIGS. 3A and 3B are conceptual diagrams showing a schematic structureand operations of a color separating lens array according to an exampleembodiment;

FIGS. 4A and 4B are schematic cross-sectional views of a pixel array inan image sensor according to an example embodiment;

FIG. 5A is a plan view showing a schematic arrangement of photosensitivecells, FIG. 5B is a plan view showing an example of an arrangement ofnanoposts of a color separating lens array, and FIG. 5C is a detailedand enlarged plan view of a part of FIG. 5B;

FIG. 6A shows phase profiles of first and second wavelength lightpassing through a color separating lens array along line I-I′ of FIG.5B, FIG. 6B shows a phase of the first wavelength light passing throughthe color separating lens array at the center of first to fourthregions, and FIG. 6C shows a phase of the second wavelength lightpassing through the color separating lens array at the center of thefirst to fourth regions;

FIG. 6D shows a traveling direction of first wavelength light incidenton a first region of the color separating lens array of FIGS. 6A and 6Band the periphery thereof, and FIG. 6E shows a microlens arrayequivalent to the color separating lens array with respect to the firstwavelength light;

FIG. 6F shows a traveling direction of second wavelength light incidenton a second region of the color separating lens array of FIGS. 6A and 6Band the periphery thereof, and FIG. 6G shows a microlens arrayequivalent to the color separating lens array with respect to the secondwavelength light;

FIG. 7A shows phase profiles of first and third wavelength light passingthrough a color separating lens array along line II-II′ of FIG. 5B, FIG.7B shows a phase of third wavelength light passing through the colorseparating lens array at the center of first to fourth regions, and FIG.7C shows a phase of the first wavelength light passing through the colorseparating lens array at the center of the first to fourth regions;

FIG. 7D shows a traveling direction of third wavelength light incidenton a third region of the color separating lens array of FIGS. 7A and 7Band the periphery thereof, and FIG. 7E shows a microlens arrayequivalent to the color separating lens array with respect to the thirdwavelength light;

FIG. 7F shows a traveling direction of second wavelength light incidenton a second region of the color separating lens array of FIGS. 7A and 7Band the periphery thereof, and FIG. 7G shows a microlens arrayequivalent to the color separating lens array with respect to the secondwavelength light;

FIG. 8 shows spectrums of light incident on a sensor substrate through acolor separating lens array when there is no spectrum shaping layer inthe pixel array of FIGS. 4A and 4B;

FIGS. 9A and 9B show color separating lens arrays according to anotherexample embodiment;

FIG. 10A is a perspective view of a first shaper of FIGS. 4A and 4B,FIG. 10B is a cross-sectional view taken along line III-III′ of FIG.10A, FIG. 10C is a graph showing transmittance of the first shaper ofFIG. 10A, FIG. 10D is a graph showing transmittance of an organic colorfilter applicable to a green pixel, and FIG. 10E shows a first spectrumshaped by the first shaper of FIG. 10A;

FIG. 11A is a perspective view of a second shaper of FIGS. 4A and 4B,FIG. 11B is a cross-sectional view taken along line IV-IV′ of FIG. 11A,FIG. 11C is a graph showing transmittance of the second shaper of FIG.11A, FIG. 11D is a graph showing transmittance of an organic colorfilter applicable to a blue pixel, and FIG. 11E shows a second spectrumshaped by the second shaper of FIG. 11A;

FIG. 12A is a perspective view of a third shaper of FIGS. 4A and 4B,FIG. 12B is a cross-sectional view taken along the line V-V′ of FIG.12A, FIG. 12C is a graph showing transmittance of the third shaper ofFIG. 12A, FIG. 12D is a graph showing transmittance of an organic colorfilter applicable to a red pixel, and FIG. 12E shows a third spectrumshaped by the third shaper of FIG. 12A;

FIG. 13 shows a spectrum of light incident on a sensor substrate when aspectrum shaping layer is included in the pixel array of FIGS. 4A and4B, i.e., through a color separating lens array and the spectrum shapinglayer;

FIGS. 14A to 14C are diagrams illustrating a spectrum shaping layeraccording to another example embodiment;

FIGS. 15A and 15B are schematic cross-sectional views of a pixel arrayaccording to another example embodiment;

FIG. 16A is a schematic cross-sectional view of an optical filter layershown in FIGS. 15A and 15B, and FIG. 16B is a graph showingtransmittance of the optical filter layer for each wavelength;

FIG. 17 is a diagram illustrating a spectrum showing light incident on asensor substrate in a pixel array of FIGS. 15A and 15B;

FIG. 18 is a schematic block diagram showing an example of an electronicdevice including an image sensor according to example embodiments;

FIG. 19 is a schematic block diagram showing a camera module of FIG. 18;and

FIGS. 20 to 29 show various examples of electronic devices to whichimage sensors are applied according to example embodiments.

DETAILED DESCRIPTION

Reference will now be made in detail to example embodiments of which areillustrated in the accompanying drawings, wherein like referencenumerals refer to like elements throughout. In this regard, the exampleembodiments may have different forms and should not be construed asbeing limited to the descriptions set forth herein. Accordingly, theexample embodiments are merely described below, by referring to thefigures, to explain aspects. As used herein, the term “and/or” includesany and all combinations of one or more of the associated listed items.Expressions such as “at least one of,” when preceding a list ofelements, modify the entire list of elements and do not modify theindividual elements of the list. For example, the expression, “at leastone of a, b, and c,” should be understood as including only a, only b,only c, both a and b, both a and c, both b and c, or all of a, b, and c.

Hereinafter, an image sensor including a color separating lens array andan electronic device including the image sensor will be described indetail with reference to accompanying drawings. The example embodimentsof the disclosure are capable of various modifications and may beembodied in many different forms. In the drawings, like referencenumerals denote like components, and sizes of components in the drawingsmay be exaggerated for convenience of explanation.

When a layer, a film, a region, or a panel is referred to as being “on”another element, it may be directly on/under/at left/right sides of theother layer or substrate, or intervening layers may also be present.

It will be understood that although the terms “first,” “second,” etc.may be used herein to describe various components, these componentsshould not be limited by these terms. These components are only used todistinguish one component from another. These terms do not limit thatmaterials or structures of components are different from one another.

An expression used in the singular encompasses the expression of theplural, unless it has a clearly different meaning in the context. Itwill be further understood that when a portion is referred to as“comprises” another component, the portion may not exclude anothercomponent but may further comprise another component unless the contextstates otherwise.

In addition, the terms such as “ . . . unit”, “module”, etc. providedherein indicates a unit performing a function or operation, and may berealized by hardware, software, or a combination of hardware andsoftware.

The use of the terms of “the above-described” and similar indicativeterms may correspond to both the singular forms and the plural forms.

Also, the steps of all methods described herein may be performed in anysuitable order unless otherwise indicated herein or otherwise clearlycontradicted by context. Also, the use of all exemplary terms (forexample, etc.) is only to describe a technical spirit in detail, and thescope of rights is not limited by these terms unless the context islimited by the claims.

FIG. 1 is a schematic block diagram of an image sensor 1000 according toan example embodiment. Referring to FIG. 1, the image sensor 1000 mayinclude a pixel array 1100, a timing controller 1010, a row decoder1020, and an output circuit 1030. The image sensor 1000 may include acharge coupled device (CCD) image sensor or a complementary metal oxidesemiconductor (CMOS) image sensor that converts an optical image into anelectrical signal.

The pixel array 1100 includes pixels that are two-dimensionally arrangedin a plurality of rows and columns. The row decoder 1020 selects one ofthe rows in the pixel array 1100 in response to a row address signaloutput from the timing controller 1010. The output circuit 1030 outputsa photosensitive signal, in a column unit, from a plurality of pixelsarranged in the selected row. To this end, the output circuit 1030 mayinclude a column decoder and an analog-to-digital converter (ADC). Forexample, the output circuit 1030 may include a column decoder and aplurality of ADCs arranged respectively for the columns in the pixelarray 1100 or one ADC arranged at an output end of a column decoder. Thetiming controller 1010, the row decoder 1020, and the output circuit1030 may be implemented as one chip or in separate chips. A processorfor processing an image signal output from the output circuit 1030 maybe implemented as one chip with the timing controller 1010, the rowdecoder 1020, and the output circuit 1030.

The pixel array 1100 may include a plurality of pixels that sense lightof different wavelengths. The arrangement of the pixels may beimplemented in various ways. For example, FIGS. 2A to 2C show variouspixel arrangements of the pixel array 1100.

FIG. 2A shows a Bayer pattern that is adopted in the image sensor 1000.Referring to FIG. 2A, one unit pattern includes four quadrant regions,and first through fourth quadrants may be a blue pixel B, a green pixelG, a red pixel R, and a green pixel G, respectively. The unit patternsmay be repeatedly and two-dimensionally arranged in a first direction(X-direction) and a second direction (Y-direction). For example, twogreen pixels G are arranged in one diagonal direction and one blue pixelB and one red pixel R are arranged in another diagonal direction in aunit pattern of a 2×2 array. In the entire arrangement of pixels, afirst row in which a plurality of green pixels G and a plurality of bluepixels B are alternately arranged in the first direction and a secondrow in which a plurality of red pixels R and a plurality of green pixelsG are alternately arranged in the first direction are repeatedlyarranged in the second direction.

The arrangement of the pixel array 1100 may have various types, inaddition to the Bayer pattern. For example, referring to FIG. 2B, a CYGMarrangement, in which a magenta pixel M, a cyan pixel C, a yellow pixelY, and a green pixel G configure one unit pattern, may be used. Also,referring to FIG. 2C, an RGBW arrangement, in which a green pixel G, ared pixel R, a blue pixel, and a white pixel W configure one unitpattern, may be used. The unit pattern may have a 3×2 array. In additionto the above examples, the pixels in the pixel array 1100 may bearranged in various ways according to color characteristics of the imagesensor 1000. Hereinafter, it will be described that the pixel array 1100in the image sensor 1000 has the Bayer pattern, but an operatingprinciple also applies to other types of pixel arrangements than theBayer pattern.

The pixel array 1100 of the image sensor 1000 may include a colorseparating lens array that condenses light of a color corresponding toeach pixel. FIGS. 3A and 3B are conceptual diagrams showing a schematicstructure and operations of a color separating lens array 130 accordingto an example embodiment.

Referring to FIG. 3A, the color separating lens array 130 may includenanoposts NP that change a phase of incident light Li differentlyaccording to an incidence location, and may be divided into a firstregion 131 corresponding to a first target region R1 on which firstwavelength light LA1 included in the incident light Li is condensed, anda second region 132 corresponding to a second target region R2 on whichsecond wavelength light LA2 included in the incident light Li iscondensed. Each of the first region 131 and the second region 132 mayinclude one or a plurality of nanoposts NP. The first region 131 and thesecond region 132 may respectively face the first target region R1 andthe second target region R2.

The color separating lens array 130 may form different phase profiles infirst wavelength light Lλ1 and second wavelength light Lλ2 included inthe incident light Li so that the first wavelength light Lλ1 may becondensed on the first target region R1 and the second wavelength lightLλ2 may be condensed on the second target region R2.

For example, referring to FIG. 3B, the color separating lens array 130may allow the first wavelength light Lλ1 to have a first phase profilePP1 and the second wavelength light Lλ2 to have a second phase profilePP2 at a location right after passing through the color separating lensarray 130, at a lower surface location of the color separating lensarray 130, so that the first wavelength light Lλ1 and the secondwavelength light Lλ2 may be condensed on the respective correspondingfirst and second target regions R1 and R2. For example, the firstwavelength light Lλ1 passing through the color separating lens array 130may have the phase profile PP1 that is the largest at the center of thefirst region 131, and is reduced in a direction away from the center ofthe first region 131, for example, in a direction of the second region132. This phase profile may be similar to a phase profile of lightconverging to a point through a convex lens, for example, a microlenshaving a convex center, and the first wavelength light Lλ1 may becondensed on the first target region R1. In addition, the secondwavelength light Lλ2 passing through the color separating lens array 130may have the phase profile PP2 that is the largest at the center of thesecond region 132, and is reduced in a direction away from the center ofthe second region 132, for example, in a direction of the first region131, and may be condensed on the second target region R2.

Because the refractive index of a material appears differently dependingon the wavelength of reacting light, as shown in FIG. 3B, the colorseparating lens array 130 may provide different phase profiles withrespect to the first wavelength light Lλ1 and the second wavelengthlight Lλ2. For example, because the same material has a differentrefractive index according to the wavelength of light reacting to thematerial and a phase delay experienced by light when passing through thematerial is also different for each wavelength, a different phaseprofile may be formed for each wavelength. For example, the refractiveindex of the first region 131 with respect to the first wavelength lightLλ1 may be different from the refractive index of the first region 131with respect to the second wavelength light Lλ2, and the phase delayexperienced by the first wavelength light Lλ1 passing through the firstregion 131 and the phase delay experienced by the second wavelengthlight Lλ2 passing through the first region 131 may be different fromeach other. Thus, the color separating lens array 130 designedconsidering the characteristics of light may provide different phaseprofiles with respect to the first wavelength light Lλ1 and the secondwavelength light Lλ2.

The color separating lens array 130 may include the nanoposts NParranged based on a specific rule so that the first wavelength light Lλ1and the second wavelength light Lλ2 have first and second phase profilesPP1 and PP2, respectively. Here, the specific rule may be applied toparameters, such as the shape of the nanoposts NP, sizes (for example,width and height), a distance between the nanoposts NP, and thearrangement form thereof, and these parameters may be determinedaccording to a phase profile to be implemented through the colorseparating lens array 130.

A rule in which the nanoposts NP are arranged in the first region 131,and a rule in which the nanoposts NP are arranged in the second region132 may be different from each other. For example, the shape, size,space, and/or arrangement of the nanoposts NP included in the firstregion 131 may be different from the shape, size, space, and/orarrangement of the nanoposts NP included in the second region 132.

The cross-sectional diameters of the nanoposts NP may havesub-wavelength dimensions. Here, the sub-wavelength refers to awavelength less than a wavelength band of light to be branched. Thenanoposts NP may have dimensions less than a shorter wavelength amongfirst and second wavelengths. When the incident light Li is a visibleray, the cross-sectional diameters of the nanoposts NP may havedimensions such as, for example, less than 400 nm, 300 nm, or 200 nm.Meanwhile, the heights of the nanoposts NP may be, for example, 500 nmto 1500 nm, and may be larger than the cross-sectional diameters of thenanoposts NP. The nanoposts NP may be a combination of two or more postsstacked in a height direction (Z direction).

The nanoposts NP may include a material having a higher refractive indexthan that of a peripheral material. For example, the nanoposts NP mayinclude c-Si, p-Si, a-Si, and a Group III-V compound semiconductor(gallium phosphide (GaP), gallium nitride (GaN), gallium arsenide (GaAs)etc.), silicon carbide (SiC), titanium oxide (TiO₂), silicon nitride(SiN), and/or a combination thereof. The nanoposts NP having adifference in a refractive index from the refractive index of theperipheral material may change a phase of light that passes through thenanoposts NP. This is caused by a phase delay due to the shape dimensionof the sub-wavelength of the nanoposts NP, and a degree of the phasedelay may be determined by detailed shape dimensions, arrangement types,etc. of the nanoposts NP. The peripheral material of the nanoposts NPmay include a dielectric material having a lower refractive index thanthat of the nanoposts NP, for example, silicon oxide (SiO₂) or air.

The first wavelength and the second wavelength may be in a wavelengthband of visible rays, but are not limited thereto. The first wavelengthand the second wavelength may be in a variety of wavelengths accordingto the arrangement rule of the nanoposts NP. Although two wavelengthsare branched and condensed, incident light may be branched into three ormore directions according to wavelengths and condensed.

Hereinafter, an example in which the color separating lens array 130described above is applied to the pixel array 1100 of the image sensor1000 will be described below.

FIGS. 4A and 4B are cross-sectional views of the pixel array 1100according to an example embodiment, FIG. 5A is a plan view showing anarrangement of photosensitive cells 111, 112, 113, and 114 of the pixelarray 1100, FIG. 5B is a plan view showing an example of an arrangementof the nanoposts NP of the color separating lens array 130, and FIG. 5Cis a detailed and enlarged plan view of a part of FIG. 5B.

Referring to FIGS. 4A and 4B, the pixel array 1100 may include a sensorsubstrate 110 including the plurality of photosensitive cells 111, 112,113, and 114 sensing light, a spectrum shaping layer 150 disposed on thesensor substrate 110, a transparent spacer layer 120 disposed on thespectrum shaping layer 150, and the color separating lens array 130 onthe spacer layer 120.

The sensor substrate 110 may include a first photosensitive cell 111, asecond photosensitive cell 112, a third photosensitive cell 113, and afourth photosensitive cell 114 that convert light into electricalsignals. Among the first to fourth photosensitive cells 111, 112, 113,and 114, as shown in FIG. 4A, the first photosensitive cell 111 and thesecond photosensitive cell 112 may be alternately arranged in the firstdirection (X-direction), and in a cross-section in which a y-directionlocation is different from FIG. 4A, as shown in FIG. 4B, the third andfourth photosensitive cells 113 and 114 may be alternately arranged inthe first direction (X-direction). FIG. 5A shows an arrangement of thephotosensitive cells 111, 112, 113, and 114 when the pixel array 1100has the Bayer pattern as shown in FIG. 2A. This arrangement is forindividually sensing incident light with a unit pattern such as theBayer pattern. For example, the first and fourth light photosensitivecells 111 and 114 may sense first wavelength light, the secondphotosensitive cell 112 may sense second wavelength light, and the thirdlight photosensitive cell 113 may sense third wavelength light.Hereinafter, the first wavelength light is illustrated as green light,the second wavelength light is illustrated as blue light, and the thirdwavelength light is illustrated as red light, and the first and fourthphotosensitive cells 111 and 114 may correspond to a green pixel G, thesecond photosensitive cell 112 may correspond to a blue pixel B, and thethird photosensitive cell 113 may correspond to a red pixel R. Aseparator for separating cells may be further formed in a boundarybetween cells.

The spectrum shaping layer 150 may shape a spectrum distribution byabsorbing and/or reflecting part of incident light before the lightbranched by the color separating lens array 130 is incident on each ofthe photosensitive cells 111, 112, 113, and 114. The spectrum shapinglayer 150 may include a first shaper 151, a second shaper 152, and athird shaper 153 respectively corresponding to the green G pixel, blue Bpixel, and red R pixel. For example, the spectrum shaping layer 150 mayinclude the first shaper 151 disposed on the first and fourthphotosensitive cells 111 and 114 corresponding to the green pixel G, thesecond shaper 152 disposed on the second photosensitive cell 112corresponding to the blue pixel B, and the third shaper 153 disposed onthe third photosensitive cell 113 corresponding to the red pixel R. Inthe example embodiments with reference to FIGS. 4A and 4B, a structurein which the spectrum shaping layer 150 is formed on all of thephotosensitive cells 111, 112, 113, and 114 is illustrated, however,embodiments are not limited thereto, and the spectrum shaping layer 150may be formed only on some of the photosensitive cells 111, 112, 113,and 114. For example, the first shaper 151 may be disposed only on thefirst and fourth photosensitive cells 111 and 114, whereas the spectrumshaping layer 150 may not be disposed on the second and thirdphotosensitive cells 112 and 113. A detailed structure of each of thefirst to third shapers 151, 152, and 153 will be described below withreference to FIGS. 10A to 12E.

The spacer layer 120 may be disposed between the sensor substrate 110and the color separating lens array 130 to maintain a constant gapbetween the sensor substrate 110 and the color separating lens array130. The spacer layer 120 may include a transparent material withrespect to the visible ray, for example, a dielectric material having alower refractive index than that of the nanoposts NP and a lowabsorption coefficient in the visible ray band, for example, SiO₂,siloxane-based spin on glass (SOG), etc. The spectrum shaping layer 150described above may be regarded as a structure buried in the spacerlayer 120. The thickness h of the spacer layer 120 may be selected to bewithin the range of h_(t)−p≤h≤h_(t)+p. In this regard, when atheoretical thickness h_(t) of the spacer layer 120 may be expressed byEquation 1 below when a refractive index of the spacer layer 120 withrespect to a wavelength λ₀ is n, a pitch of a photosensitive cell is p.

$\begin{matrix}{h_{t} = {\frac{{np}^{2}}{\lambda_{0}} - \frac{\lambda_{0}}{4n}}} & \lbrack {{Equation}\mspace{14mu} 1} \rbrack\end{matrix}$

The theoretical thickness h_(t) of the spacer layer 120 may refer to afocal length at which light having a wavelength of λ₀ is condensed ontoa top surface of the photosensitive cells 111, 112, 113, and 114 by thecolor separating lens array 130. λ₀ may be a reference wavelength fordetermining the thickness h of the spacer layer 120, and the thicknessof the spacer layer 120 may be designed with respect to 540 nm, which isthe central wavelength of green light.

The color separating lens array 130 may be supported by the spacer layer120 and may include the nanoposts NPs that change the phase of incidentlight and dielectrics, such as air or SiO₂, disposed between thenanoposts NPs and having refractive indexes lower than those of thenanoposts NP.

Referring to FIG. 5B, the color separating lens array 130 may be dividedinto a first region 131, a second region 132, a third region 133, and afourth region 134 respectively corresponding to the first to fourthphotosensitive cells 111, 112, 113, and 114 of FIG. 5A. The first tofourth regions 131, 132, 133, and 134 may be disposed to face the firstto fourth photosensitive cells 111, 112, 113, and 114, respectively. Forexample, the first region 131 of the color separating lens array 130 maybe disposed to correspond to the first photosensitive cell 111, thesecond region 132 may be disposed to correspond to the secondphotosensitive cell 112, the third region 133 may be disposed tocorrespond to the third photosensitive cell 113, and the fourth region134 may be disposed to correspond to the fourth photosensitive cell 114.The first to fourth regions 131, 132, 133, and 134 may betwo-dimensionally arranged in the first direction (X direction) and thesecond direction (Y direction) so that a first row in which the firstand second regions 131 and 132 are alternately arranged, and a secondrow in which the third and fourth regions 133 and 134 are alternatelyarranged are alternately repeated to each other. The color separatinglens array 130 may also include a plurality of two-dimensionallyarranged unit patterns like a photosensitive cell array of the sensorsubstrate 110, and each unit pattern may include the first to fourthregions 131, 132, 133 and 134 arranged in a 2×2 form.

FIGS. 4A and 4B show a structure in which the first to fourth regions131, 132, 133, and 134 and the first to fourth photosensitive cells 111,112, 113, and 114 have the same size and face each other in a verticaldirection as an example, but the color separating lens array 130 may bedivided into a plurality of regions defined in other forms, such as aregion for condensing first wavelength light, a region for condensingsecond wavelength light, etc.

The color separating lens array 130 may include the nanoposts NP ofwhich the size, shape, space and/or arrangement are determined so thatthe first wavelength light is branched and condensed on the firstphotosensitive cell 111 and the fourth photosensitive cell 114, thesecond wavelength light is branched and condensed on the secondphotosensitive cell 112, and the third wavelength light is branched andcondensed on the third photosensitive cell 113. Meanwhile, the thickness(Z direction) of the color separating lens array 130 may be similar tothe heights of the nanoposts NP, and may be, for example, about 500 nmto about 1500 nm.

Referring to FIG. 5B, the first to fourth regions 131, 132, 133, and 134may include the nanoposts NP each having a cylindrical shape of acircular cross-section. The nanoposts NP having differentcross-sectional areas from one another are arranged on the center ofeach of the first to fourth regions 131, 132, 133, and 134. Thenanoposts NP may be also arranged on the center of a boundary betweenpixels and a crossing point of the pixel boundaries. The cross-sectionalarea of the nanoposts NP arranged at the boundary between pixels may beless than those of the nanoposts NP arranged at the center of the pixel.

FIG. 5C is a detailed view of the arrangement of the nanoposts NP inpartial regions of FIG. 5B, that is, the first to fourth regions 131,132, 133, and 134 constituting the unit pattern. In FIG. 5C, thenanoposts NP are indicated as p1 to p9 according to detailed locationsthereof in the unit pattern. Referring to FIG. 5C, from among thenanoposts NP, a nanopost p1 on the center of the first region 131 and ananopost p4 on the center of the fourth region 134 have largercross-sectional areas than those of a nanopost p2 on the center of thesecond region 132 or a nanopost p3 on the center of the third region133, and the nanopost p2 on the center of the second region 132 has alarger cross-sectional area than that of the nanopost p3 on the centerof the third region 133. However, embodiments are not limited to theabove example, and if necessary, the nanoposts NP having various shapes,sizes, and arrangements may be applied.

The nanoposts NP included in the first and fourth regions 131 and 134corresponding to the green pixel G may have different distribution rulesin the first direction (X direction) and the second direction (Ydirection). For example, the nanoposts NP arranged in the first andfourth regions 131 and 134 may have different size arrangements in thefirst direction (X direction) and the second direction (Y direction). Asshown in FIG. 5C, from among the nanoposts NP, a cross-sectional area ofa nanopost p5 located at a boundary between the first region 131 and thesecond region 132 that is adjacent to the first region 131 in the firstdirection (X direction) is different from that of a nanopost p6 locatedat a boundary between the first region 131 and the third region 133 thatis adjacent to the first region 131 in the second direction (Ydirection). Similarly, a cross-sectional area of a nanopost p7 at theboundary between the fourth region 134 and the third region 133 that isadjacent to the fourth region 134 in the first direction (X direction)is different from that of a nanopost p8 located at the boundary betweenthe fourth region 134 and the second region 132 that is adjacent to thefourth region 134 in the second direction (Y direction).

The nanoposts NP arranged in the second region 132 corresponding to theblue pixel B and the third region 133 corresponding to the red pixel Rmay have symmetrical distribution rules in the first and seconddirections (X direction and Y direction). As shown in FIG. 5C, fromamong the nanoposts NP, the cross-sectional area of the nanoposts p5 ata boundary between adjacent pixels that are adjacent to the secondregion 132 in the first direction (X direction) and the cross-sectionalareas of the nanoposts p8 at a boundary between pixels adjacent to thesecond region 132 in the second direction (Y direction) are the same aseach other, and in the third region 133, the cross-sectional areas ofthe nanoposts p7 at a boundary between adjacent pixels in the firstdirection (X direction) and the cross-sectional areas of the nanopostsp6 at a boundary between the adjacent pixels in the second direction (Ydirection) are the same as each other.

In addition, the nanoposts p9 at four corners in each of the first tofourth regions 131, 132, 133, and 134, that is, points where the fourregions cross one another, have the same cross-sectional areas from oneanother.

The above distribution is caused by the pixel arrangement in the Bayerpattern. Adjacent pixels to the blue pixel B and the red pixel R in thefirst direction (X direction) and the second direction (Y direction) arethe green pixels G, whereas the adjacent pixel to the green pixel Gcorresponding to the first region 131 in the first direction (Xdirection) is the blue pixel B and the adjacent pixel to the green pixelG in the second direction (Y direction) is the red pixel R. In addition,the adjacent pixel to the green pixel G corresponding to the fourthregion 134 in the first direction (X direction) is the red pixel R andthe adjacent pixel to the green pixel G in the second direction (Ydirection) is the blue pixel B. In addition, the green pixels Gcorresponding to the first and fourth regions 131 and 134 are adjacentto the same pixels, for example, the green pixels G in four diagonaldirections, the blue pixel B corresponding to the second region 132 isadjacent to the same pixels, for example, the red pixels R in fourdiagonal directions, and the red pixel R corresponding to the thirdregion 133 is adjacent to the same pixels, for example, the blue pixelsB in four diagonal directions. Therefore, in the second and thirdregions 132 and 133 respectively corresponding to the blue pixel B andthe red pixel R, the nanoposts NP may be arranged in the form of 4-foldsymmetry, and in the first and fourth regions 131 and 134 correspondingto the green pixels G, the nanoposts NP may be arranged in the form of2-fold symmetry. In particular, the first region 131 and the fourthregion 134 are rotated by a 90° angle with respect to each other.

The nanoposts NP of FIGS. 5B and 5C have symmetrical circularcross-sectional shapes. However, some nanoposts having asymmetricalcross-sectional shapes may be included. For example, the first andfourth regions 131 and 134 corresponding to the green pixel G may employthe nanoposts having an asymmetrical cross-sectional shape that hasdifferent widths in the first direction (X direction) and the seconddirection (Y direction), and the second and third regions 132 and 133corresponding to the blue pixel B and the red pixel R may employ thenanoposts having a symmetrical cross-sectional shape having identicalwidths in the first direction (X direction) and the second direction (Ydirection).

The arrangement rule of the color separating lens array 130 is anexample for implementing the target phase profile in which light havinga first wavelength is branched and condensed onto the first and fourthphotosensitive cells 111 and 114, light having a second wavelength isbranched and condensed onto the second photosensitive cell 112, andlight having a third wavelength is branched and condensed onto the thirdphotosensitive cell 113, however, this arrangement rule is not limitedto the illustrated patterns.

FIG. 6A shows the phase profiles PP1 and PP2 of first and secondwavelength light passing through the color separating lens array 130along line I-I′ of FIG. 5B, FIG. 6B shows a phase of the firstwavelength light passing through the color separating lens array 130 atthe center of the first to fourth regions 131, 132, 133 and 134, andFIG. 6C shows a phase of the second wavelength light passing through thecolor separating lens array 130 at the center of the first to fourthregions 131, 132, 133, and 134. The phase profiles PP1 and PP2 of thefirst and second wavelength light illustrated in FIG. 6A are the same asthe phase profiles PP1 and PP2 of the light of the first and secondwavelengths exemplarily described with reference to FIG. 3B.

Referring to FIGS. 6A and 6B, the first wavelength light passing throughthe color separating lens array 130 may have the phase profile PP1 thatis the largest at the center of the first region 131, and is reduced ina direction away from the center of the first region 131. Specifically,the phase of the first wavelength may be the largest at the center ofthe first region 131, may be gradually reduced in the form of aconcentric circle away from the center of the first region 131, may bethe smallest at the center of the second and third regions 132 and 133in the X and Y directions, and may be the smallest at a contact pointbetween the first region 131 and the fourth region 134 in the diagonaldirection, at a location right after passing through the colorseparating lens array 130, at a lower surface location of the colorseparating lens array 130 or at an upper surface of the spacer layer120. When 2π is determined with respect to the phase of the firstwavelength light emitted from the center of the first region 131, lightof the phase which is 0.9π to 1.1π at the center of the second and thirdregions 132 and 133, of the phase which is 2π at the center of thefourth region 134, and of the phase which is 1.1π to 1.5π at the contactpoint between the first region 131 and the fourth region 134 may beemitted. The first phase profile PP1 does not mean that a phase delayamount of the light passing through the center of the first region 131is the largest. When the phase of the light passing through the firstregion 131 is determined as 2π, a phase value of light passing throughanother location (when the phase delay is larger than 2π) may be a valueremaining by removing by 2nπ, that is, a profile of a wrapped phase. Forexample, when the phase of light passing through the first region 131 is2π, and the phase of light passing through the center of the secondregion 132 is 3π, the phase in the second region 132 may be π remainingby removing 2π (when n=1) from 3π.

Referring to FIGS. 6A and 6C, the second wavelength light passingthrough the color separating lens array 130 may have the phase profilePP2 that is the largest at the center of the second region 132 and isreduced in a direction away from the center of the second region 132.Specifically, the phase of the second wavelength may be the largest atthe center of the second region 132, may be gradually reduced in theform of a concentric circle away from the center of the second region132, may be the smallest at the center of the first and fourth regions131 and 134 in the X and Y directions, and may be the smallest at thecenter of the third region 133 in the diagonal direction, at a locationright after passing through the color separating lens array 130. Whenthe phase of the second wavelength light at the center of the secondregion 132 is 2π, the phase of the second wavelength light may be 0.97to 1.1π at the center of the first and fourth regions 131 and 134, andmay be a value less than π, for example, 0.2π to 0.9π, at the center ofthe third region 133.

FIG. 6D shows a traveling direction of the first wavelength lightincident on the first region 131 of the color separating lens array 130corresponding to the first photosensitive cell 111 and the periphery ofthe color separating lens array 130, and FIG. 6E shows a microlens arrayequivalent to the color separating lens array 130 with respect to thefirst wavelength light.

The first wavelength light incident on the periphery of the first region131 is condensed on the first photosensitive cell 111 by the colorseparating lens array 130 as shown in FIG. 6D, and the first wavelengthlight from the first to third regions 131, 132, and 133 is incident onthe first photosensitive cell 111. The phase profile of the firstwavelength light described with respect to FIGS. 6A and 6B is similar toa phase profile of light passing through a virtual first microlens ML1by connecting the centers of two second regions 132 and two thirdregions 133 adjacent to the first region 131 with one side facing eachother. Accordingly, as shown in FIG. 6E, the color separating lens array130 may be equivalent to an array of the plurality of first microlensesML1 arranged based on the first region 131 with respect to the firstwavelength light incident on the periphery of the first region 131.Because each of the equivalent first microlenses ML1 has a larger areathan the corresponding first photosensitive cell 111, not only the firstwavelength light incident on the first region 131 but also the firstwavelength light incident on the second and third regions 132 and 133may also be condensed on the first photosensitive cell 111. For example,the area of the first microlens ML1 may be 1.2 times to 2 times largerthan the area of the corresponding first photosensitive cell 111.

FIG. 6F shows a traveling direction of the second wavelength lightincident on the second region 132 of the color separating lens array 130corresponding to the second photosensitive cell 112 and the periphery ofthe color separating lens array 130, and FIG. 6G shows a microlens arrayequivalent to the color separating lens array 130 with respect to thesecond wavelength light.

The second wavelength light is condensed on the second photosensitivecell 112 by the color separating lens array 130 as shown in FIG. 6F, andthe second wavelength light from the first to fourth regions 131, 132,133, and 134 is incident on the second photosensitive cell 112. Thephase profile of the second wavelength light described above withreference to FIGS. 6A and 6C is similar to a phase profile of lightpassing through a virtual second microlens ML2 by connecting the centersof four third regions 133 adjacent to the second region 132 withvertexes facing each other. Accordingly, as shown in FIG. 6G, the colorseparating lens array 130 may be equivalent to an array of the pluralityof second microlenses ML2 arranged based on the second region 132 withrespect to the second wavelength light. Because each of the second microlenses ML2 is larger than the corresponding second photosensitive cell112, not only the second wavelength light incident in a direction of thesecond photosensitive cell 112 but also the second wavelength lightincident in directions of the first, third, and fourth photosensitivecells 111, 113, and 114 may also be condensed on the secondphotosensitive cell 112. For example, the area of the second microlensML2 may be 1.5 to 4 times larger than the area of the correspondingsecond photosensitive cell 112.

FIG. 7A shows phase profiles PP3 and PP4 of first and third wavelengthlight passing through the color separating lens array 130 along lineII-II′ of FIG. 5B, FIG. 7B shows a phase of the third wavelength lightpassing through the color separating lens array 130 at the center of thefirst to fourth regions 131, 132, 133, and 134, and FIG. 7C shows aphase of the first wavelength light passing through the color separatinglens array 130 at the center of the first to fourth regions 131, 132,133, and 134.

Referring to FIGS. 7A and 7B, the third wavelength light passing throughthe color separating lens array 130 may have the third phase profile PP3similar to that of the second wavelength light with respect to thesecond region 132 described above. The phase profile PP3 may be thelargest at the center of the third region 133 and reduced in a directionaway from the center of the third region 133. Specifically, the phase ofthe third wavelength light may be the largest at the center of the thirdregion 133, may be gradually reduced in the form of a concentric circleaway from the center of the third region 133, may be the smallest at thecenter of the first and fourth regions 131 and 134 in the X and Ydirections, and may be the smallest at the center of the second region132 in the diagonal direction, at a location right after passing throughthe color separating lens array 130. When the phase of the thirdwavelength light at the center of the third region 133 is 2π, the phaseof the third wavelength light may be 0.9π to 1.1π at the center of thefirst and fourth regions 131 and 134, and may be a value less than π,about 0.2π to 0.9π, at the center of the second region 132.

FIG. 7D shows a traveling direction of the third wavelength lightincident on the third region 133 of the color separating lens array 130corresponding to the third photosensitive cell 113 and the peripherythereof, and FIG. 7E shows a microlens array equivalent to the colorseparating lens array 130 with respect to the third wavelength light.

The third wavelength light is condensed by the color separating lensarray 130 to the third photosensitive cell 113 as shown in FIG. 7D, andthe third wavelength light from the first to fourth regions 131, 132,133, and 134 is incident on the third photosensitive cell 113. The phaseprofile of the third wavelength light described above with reference toFIGS. 7A and 7B is similar to a phase profile of light passing through avirtual third microlens ML3 by connecting the centers of four secondregions 132 adjacent to the third region 133 with vertexes facing eachother. Therefore, as shown in FIG. 7E, the color separating lens array130 may be equivalent to an array of the plurality of third microlensesML3 arranged based on the third photosensitive cell 113 with respect tothe third wavelength light. Because the area of each of the thirdmicrolenses ML3 is larger than that of the corresponding thirdphotosensitive cell 113, not only the third wavelength light incident ina direction of the third photosensitive cell 113 but also the thirdwavelength light incident in directions of the first, second, and fourthphotosensitive cells 111, 112, and 114 may also be condensed on thethird photosensitive cell 113. For example, the area of the thirdmicrolens ML3 may be 1.5 to 4 times larger than the area of thecorresponding third photosensitive cell 113.

Referring to FIGS. 7A and 7C, the first wavelength light incident on theperiphery of the fourth region 134 may have the fourth phase profile PP4similar to that of the first wavelength light with respect to the firstregion 131, described above. The phase profile PP4 may be the largest atthe center of the fourth region 134 and reduced in a direction away fromthe center of the fourth region 134. The phase of the first wavelengthlight with respect to the fourth region 134 may be the largest at thecenter of the fourth region 134, may be gradually reduced in the form ofa concentric circle away from the center of the fourth region 134, maybe the smallest at the center of the second and third regions 132 and133 in the X and Y directions, and may be the smallest at a contactpoint of the first region 131 and the fourth region 134 in the diagonaldirection, at a location right after passing through the colorseparating lens array 130. When the phase of the first wavelength lightis 2π at the center of the fourth region 134, the phase of the firstwavelength light may be 0.97 to 1.17 at the center of the second andthird regions 132 and 133, 2π at the center of the first region 131, and1.1π to 1.5π at the contact point of the first region 131 and the fourthregion 134.

FIG. 7F shows a traveling direction of the first wavelength lightincident on the fourth region and the periphery thereof, and FIG. 7Gshows a microlens array equivalent to the color separating lens array130 with respect to the first wavelength light. The first wavelengthlight is condensed on the two photosensitive cells, that is, the firstand fourth photosensitive cells 111 and 114, and the phase profile andthe travel direction of the first wavelength light incident on thefourth region 134 are similar to the phase profile and the traveldirection of the first wavelength light incident on the first region131, and thus, redundant descriptions thereof are omitted.

Referring to FIG. 7F, the first wavelength light incident on theperiphery of the fourth region 134 is condensed by the color separatinglens array 130 to the fourth photosensitive cell 114, and the firstwavelength light from the second to fourth regions 132, 133, and 134 isincident on the fourth photosensitive cell 114. As shown in FIG. 7G, thecolor separating lens array 130 may be equivalent to an array of theplurality of fourth microlenses ML4 arranged based on the fourthphotosensitive cell 114 with respect to the first wavelength lightincident on the periphery of the fourth region 134.

FIG. 8 shows first to third spectrums S1, S2, and S3 of light directlyincident on a sensor substrate through the color separating lens array130 when there is no spectrum shaping layer in the pixel array 1100 ofFIGS. 4A and 4B.

The vertical axis of FIG. 8 represents quantum efficiency (QE), and thehorizontal axis represents the wavelength of light. QE indicates adegree to which photons incident on the pixel array 1100 are convertedinto electrons by a photoelectric conversion element. For example, whenincident photons are converted into electrons with an efficiency of 80%,QE may be 0.8, and when incident photons are converted into electronswith an efficiency of 100%, QE may be 1.0. In a typical pixel array, QEis not equal to or larger than 1.0, but because the pixel array 1100 ofFIGS. 4A and 4B includes the color separating lens array 130, QE may beequal to or larger than 1.0. For example, that the QE of the secondphotosensitive cell 112 for a 475 nm wavelength is 2.0 means that whenphotons of 475 nm wavelength light traveling toward the secondphotosensitive cell 112 are 100, electrons corresponding to 200 photonsare generated in the second photosensitive cell 112. In the pixel array1100 of FIGS. 4A and 4B, not only photons of 475 nm wavelength lighttraveling toward the second photosensitive cell 112 but also photons of475 nm wavelength light traveling toward the first and thirdphotosensitive cells 111 and 113 are incident on the secondphotosensitive cell 112, and thus, QE may be equal to or larger than1.0. For example, an amount of photons of 475 nm wavelength lighttraveling toward the second photosensitive cell 112 after passingthrough the color separating lens array 130 may be larger than theamount of photons of 475 nm wavelength light traveling toward the secondphotosensitive cell 112 before passing through the color separating lensarray 130, and thus, the QE of the second photosensitive cell 112 withrespect to the 475 nm wavelength light may be larger than 1.0.

The first spectrum S1 of FIG. 8 is a spectrum of light incident on thepixel array 1100 that is branched by the color separating lens array 130and sensed by the first and fourth photosensitive cells 111 and 114,which are the green pixels G, and has the highest QE in a wavelengthband of 490 nm to 580 nm corresponding to green light. The secondspectrum S2 is a spectrum of light sensed by the second photosensitivecell 112, which is the blue pixel B, and has the highest QE in awavelength band of 420 nm to 475 nm corresponding to blue light. Thethird spectrum S3 is a spectrum of light sensed by the thirdphotosensitive cell 113, which is the red pixel R, and has the highestQE in a wavelength band of 590 nm to 680 nm corresponding to red light.

The color separating lens array 130 shown in FIG. 5B is only oneexample, and various types of color separating lens array 130 may bedesigned according to the color characteristics of an image sensor, thepixel pitch, the incidence angle of the incident light, etc. Inaddition, it has been described that the color separating lens array 130includes a plurality of cylindrical nanoposts NP that are spaced apartfrom each other, but embodiments are not limited thereto. For example,FIG. 9A is a plan view showing a unit pattern of another colorseparating lens array 130′ that may be applied to an image sensor of aBayer pattern type, and FIG. 9B is a plan view showing a unit pattern ofanother color separating lens array 130″.

Each of the first region 131′, the second region 132′, the third region133′, and the fourth region 134′ of the color separating lens array 130′shown in FIG. 9A is in a digitized binary form in a 16×16 rectangulararrangement, and the unit pattern has a 32×32 rectangular shape. Each ofthe first region 131″, the second region 132″, the third region 133″,and the fourth region 134″ shown in FIG. 9B is in the form of acontinuous curve that is not digitized. A rule applied to the first tofourth regions 131′, 132′, 133′, 134′, 131″, 132″, 133″, and 134″ of thecolor separating lens arrays 130′ and 130″ shown in FIGS. 9A and 9B isthe same as a rule applied to the first to fourth regions 131, 132, 133,and 134 of the color separating lens array 130.

The color separating lens arrays 130′ and 130″ satisfying the phaseprofiles and performance of the color separating lens array 130described above may be automatically designed through various types ofcomputer simulations. For example, the structures of the first to fourthregions 131′, 132′, 133′, 134′, 131″, 132″, 133″, and 134″ may beoptimized through a nature-inspired algorithm such as a geneticalgorithm, a particle swarm optimization algorithm, an ant colonyoptimization algorithm, etc., or a reverse design based on an adjointoptimization algorithm.

The first to fourth patterns of the first to fourth regions 131′, 132′,133′, 134′, 131″, 132″, 133″, and 134″ may be optimized while evaluatingperformances of candidate color separating lens arrays based onevaluation factors such as color separation spectrum, opticalefficiency, signal-to-noise ratio, etc. when designing the colorseparating lens arrays 130′ and 130″. For example, the patterns of thefirst to fourth regions 131′, 132′, 133′, 134′, 131″, 132″, 133″, and134″ may be optimized in a manner that when a target numerical value ofeach evaluation factor is determined in advance, the sum of thedifferences from the target numerical values of evaluation factors isminimized. According another example embodiment, the performance may beindexed for each evaluation factor, and the patterns of the first tofourth regions 131′, 132′, 133′, 134′, 131″, 132″, 133″, and 134″ may beoptimized so that a value representing the performance may be maximized.

FIG. 10A is a perspective view of a first shaper 151 of FIGS. 4A and 4B,FIG. 10B is a cross-sectional view taken along line III-III′ of FIG.10A, FIG. 10C is a graph showing transmittance of the first shaper 151of FIG. 10A, FIG. 10D is a graph showing transmittance of an organiccolor filter applicable to a green pixel, and FIG. 10E shows a firstspectrum S1′ shaped by the first shaper 151 of FIG. 10A.

Referring to FIGS. 10A and 10B, the first shaper 151 may include firstnanostructures 151 a arranged in an array and a first dielectric 151 bdisposed between the first nanostructures 151 a.

The first nanostructure 151 a may have a cylindrical shape with acircular cross-section, and may include p-Si, a-Si, or Si. The shape,height, and pitch of the first nanostructure 151 a may be designeddifferently according to a spectrum to be obtained by the first shaper151. For example, a diameter 151 w of the cross-section may be 80 nm, aheight 151 h may be 90 nm, and a pitch 151 p may be 100 nm.

The first dielectric 151 b may be a dielectric material having arefractive index different from that of the first nanostructure 151 a,for example, SiO₂ or air.

The first shaper 151 may shape the spectrum of light incident on thefirst and fourth photosensitive cells 111 and 114 in order to increasethe color purity and color reproducibility of the image sensor 1000, andmay differently adjust an amount of light transmitted through the firstshaper 151 for each wavelength. For example, when the first shaper 151is disposed on the first and fourth photosensitive cells 111 and 114that are green pixels G in order to reduce a ratio of blue lightincident on the first and fourth photosensitive cells 111 and 114, thetransmittance of blue light among the light passing through the firstshaper 151 may be designed to be lower than that of green light and redlight.

FIG. 10C shows a transmittance graph of the first shaper 151 designed sothat transmittance of green light is higher than transmittance of bluelight. For example, the first shaper 151 may have a transmittance equalto or more than 0.8 with respect to a wavelength band of 475 nm to 660nm, and a transmittance equal to or less than 0.8 with respect to otherwavelength bands. In particular, the first shaper 151 may exhibit atransmittance lower than 0.5 with respect to light having a wavelengthequal to or less than 450 nm, and may exhibit a transmittance equal toor more than 0.5 with respect to light having a wavelength equal to ormore than 500 nm. For example, the first shaper 151 may exhibit atransmittance of 0.9 with respect to light having a wavelength of 540 nmand a transmittance of 0.9 with respect to light having a wavelength of640 nm.

An area occupied by a shaded region in the total area of thetransmittance graph of FIG. 10C is 72.6%, which is larger than 50%. Assuch, a lower area of the transmittance graph of the first shaper 151with respect to the wavelength band of 400 nm to 700 nm, for example,the area of the shaded region in FIG. 10C, may be 40% to 90%, 50% to80%, or 55% to 75% in the total area thereof. Such an area ratio may bedefined as a transmission area ratio. In general, considering that thetransmission area ratio of the green organic color filter disposed onthe green pixel of an image sensor is 25% to 40%, as illustrated in FIG.10D, the transmission area ratio of the first shaper 151 may be largerthan the transmission area ratio of the general green organic colorfilter.

Referring to FIG. 10E, upon comparing the first spectrum S1 (see FIG. 8)sensed by the first and fourth photosensitive cells 111 and 114 when thefirst shaper 151 is not present with the shaped first spectrum S1′sensed by the first and fourth photosensitive cells 111 and 114 when thefirst shaper 151 is present, a sensing amount of light having awavelength equal to or less than 450 nm in the shaped first spectrum S1′may be reduced to be equal to or less than 50% compared to the firstspectrum S1 before shaping. For example, the QE of light of a wavelengthof 450 nm decreases from 0.4 in the first spectrum S1 before shaping to0.2 in the shaped first spectrum S1′.

FIG. 11A is a perspective view of a second shaper 152 of FIGS. 4A and4B, FIG. 11B is a cross-sectional view taken along line IV-IV′ of FIG.11A, FIG. 11C is a graph showing transmittance of the second shaper 152of FIG. 11A, FIG. 11D is a graph showing transmittance of an organiccolor filter applicable to a blue pixel, and FIG. 11E shows a secondspectrum S2′ shaped by the second shaper 152 of FIG. 11A.

Referring to FIGS. 11A and 11B, the second shaper 152 may include secondnanostructures 152 a arranged in an array and a second dielectric 152 bdisposed between the second nanostructures 152 a.

The second nanostructure 152 a may have a cylindrical shape with acircular cross-section, and may include p-Si, a-Si, or Si. The shape,height, and pitch of the second nanostructure 152 a may be designeddifferently according to a spectrum to be obtained by the second shaper152. For example, a width 152 w of the cross-section may be 200 nm, aheight 152 h may be 90 nm, and a pitch 152 p may be 420 nm.

When comparing the structures of the first shaper 151 and the secondshaper 152, the pitches 152 p (420 nm) of the second nanostructure 152 amay be 2 to 6 times larger than the pitches 151 p (100 nm) of the firstnanostructure 151 a, and the cross-sectional area 10.0*10³π nm² of thesecond nanostructure 152 a may be 4 to 10 times larger than thecross-sectional area 1.6*10³π nm² of the first nanostructure 151 a.

The second dielectric 152 b may be a dielectric material having arefractive index different from that of the second nanostructure 152 a,for example, SiO₂ or air.

The second shaper 152 may adjust the amount of light transmitted throughthe second shaper 152 differently for each wavelength. For example, whenthe second shaper 152 is disposed on the second photosensitive cell 112that is the blue pixel B to reduce a ratio of red light incident on thesecond photosensitive cell 112, the second nanostructure 152 a may bedesigned so that the transmittance of red light among incident light islower than those of green light and blue light.

FIG. 11C shows a transmittance graph of the second shaper 152 designedso that the transmittance of red light is lower than transmittances ofgreen light and blue light. Specifically, the second shaper 152 mayexhibit a transmittance equal to or more than 0.5 or equal to or morethan 0.6 with respect to a wavelength equal to or less than 610 nm, andmay exhibit a transmittance lower than 0.5 with respect to a wavelengthof 615 nm to 675 nm, for example, a wavelength of 650 nm. In particular,the second shaper 152 may exhibit a transmittance larger than 0.6 withrespect to a wavelength of 450 nm and 540 nm, and a transmittance lowerthan 0.4 with respect to a wavelength of 640 nm.

An area occupied by a shaded region in the total area of thetransmittance graph of FIG. 11C is 70.0%, which is larger than 50%. Assuch, the transmission area ratio with respect to the wavelength band of400 nm to 700 nm of the second shaper 152 may be 40% to 90%, 50% to 80%,or 55% to 75%. In general, considering that the transmission area ratioof the blue organic color filter disposed on the blue pixel of an imagesensor is 25% to 40% as illustrated in FIG. 11D, the transmission arearatio of the second shaper 152 may be larger than the transmission arearatio of the general blue organic color filter.

Referring to FIG. 11E, upon comparing the second spectrum S2 (see FIG.8) sensed by the second photosensitive cell 112 when the second shaper152 is not present with the shaped second spectrum S2′ sensed by thesecond photosensitive cell 112 when the second shaper 152 is present, asensing amount of light having a wavelength of 640 nm to 650 nm in theshaped second spectrum S2′ may be reduced to be equal to or less than50% compared to the second spectrum S2. For example, the QE of light ofa wavelength of 650 nm decreases from 0.8 before shaping to 0.4 aftershaping.

FIG. 12A is a perspective view of a third shaper 153 of FIGS. 4A and 4B,FIG. 12B is a cross-sectional view taken along the line V-V′ of FIG.12A, FIG. 12C is a graph showing transmittance of the third shaper 153of FIG. 12A, FIG. 12D is a graph showing transmittance of an organiccolor filter applicable to a red pixel, and FIG. 12E shows a thirdspectrum S3′ shaped by the third shaper 153.

Referring to 12A and 12B, the third shaper 153 may include thirdnanostructures 153 a arranged in an array and a third dielectric 153 bdisposed between the third nanostructures 153 a.

The third nanostructure 153 a may have a cylindrical shape with acircular cross-section, and may include p-Si, a-Si, or Si. The shape,height, and pitch of the third nanostructure 153 a may be designeddifferently according to a spectrum to be obtained by the third shaper153, for example, a width 153 w of the cross-section may be 140 nm, aheight 153 h may be 90 nm, and a pitch 153 p may be 180 nm. In theexample embodiments of FIGS. 10A, 11A, and 12A, the case where theheights of the first to third nanostructures 151 a, 152 a, and 153 a are90 nm has been described as an example, but the height of thenanostructures may be, for example, 30 nm to 160 nm.

When comparing the structures of the first to third shapers 151, 152 and153, the pitch 153 p (180 nm) of the third nanostructure 153 a may belarger than the pitch 151 p (100 nm) of the first nanostructure 151 aand may be smaller than the pitch 151 p (420 nm) of the secondnanostructure 152 a. In addition, the cross-sectional area 4.9*10³π nm²of the third nanostructure 153 a may be larger than the cross-sectionalarea 1.6*10³π nm² of the first nanostructure 151 a, and may be smallerthan the cross-sectional area 10.0*10³π nm² of the second nanostructure152 a.

The third dielectric 153 b may be a dielectric material having arefractive index different from that of the third nanostructure 153 a,for example, SiO₂ or air.

The third shaper 153 may adjust the amount of light transmitted throughthe third shaper 153 differently for each wavelength. For example, thethird shaper 153 is disposed on the third photosensitive cell 113 thatis the red pixel R to reduce a ratio of blue light incident on the thirdphotosensitive cell 113, the third nanostructure 153 a may be designedso that transmittance of blue light is lower than those of green lightand red light.

FIG. 12C shows a transmittance graph of the third shaper 153 designed sothat transmittance of blue light is lower than those of green light andred light. The third shaper 153 may exhibit a transmittance lower than0.5 with respect to a wavelength equal to or less than 500 nm, and mayexhibit a transmittance equal to or more than 0.5 with respect to awavelength equal to or more than 600. Specifically, the third shaper 153may exhibit a transmittance equal to or more than 0.7 with respect to awavelength equal to or more than 550 nm, a transmittance equal to orless than 0.7 with respect to a wavelength equal to or less than 540 nm,and a transmittance lower than 0.5 with respect to a wavelength equal toor less than 530 nm. In particular, the third shaper 153 may exhibit atransmittance of 0.2 with respect to a wavelength of 450 nm, atransmittance of 0.63 with respect to a wavelength of 540 nm, and atransmittance of 0.92 with respect to a wavelength of 640 nm.

An area occupied by a shaded region in the total area of thetransmittance graph of FIG. 12C is 55.0%, which is larger than 50%.Similar to the first and second shapers 151 and 152 described above, thethird corrector 153 may also have a transmission area ratio of 40% to90%, 50% to 80%, and 55% to 75% with respect to the wavelength band of400 nm to 700 nm. In general, considering that the transmission arearatio of the red organic color filter disposed on the red pixel is 25%to 40% as illustrated in FIG. 12D, the transmission area ratio of thethird corrector 153 may be larger than the transmission area ratio ofthe general red organic color filter.

As described above with respect to the first to third shapers 151, 152,and 153, the transmission area ratio of the spectrum shaping layer 150with respect to the wavelength of 400 nm to 700 nm may be 40% to 90%,50% to 80% or 55% to 75%.

Referring to FIG. 12E, upon comparing the third spectrum S3 (see FIG. 8)sensed by the third photosensitive cell 113 when the third shaper 153 isnot present with the shaped third spectrum S3′ sensed by the thirdphotosensitive cell 113 when the third shaper 153 is present, a sensingamount of light having a wavelength equal to or less than 530 nm in theshaped third spectrum S3′ may be reduced to be equal to or less than 50%compared to the third spectrum S3. For example, the QE of light of awavelength of 530 nm decreases from 0.8 before shaping to 0.4 aftershaping.

FIG. 13 shows a spectrum of light incident on the sensor substrate 110when the spectrum shaping layer 150 is included in the pixel array 1100of FIGS. 4A and 4B, through the color separating lens array 130 and thespectrum shaping layer 150.

The spectrum of FIG. 13 is different from a spectrum of FIG. 8 in thatthe spectrum is shaped by the spectrum shaping layer 150 described withreference to FIGS. 10 to 12. Compared to the spectrum of FIG. 8, in thespectrum of FIG. 13, pixel concentration for each color may be improved.In case of green light, an increase in a ratio occupied by QE of thefirst and fourth photosensitive cells 111 and 114 corresponding to thegreen pixel G in QE of green light of the entire sensor substrate 110,in case of blue light, an increase in a ratio occupied by QE of thesecond photosensitive cell 112 corresponding to the blue pixel B, and incase of red light, an increase in a ratio occupied by QE of the thirdphotosensitive cell 113 corresponding to the red pixel R may mean thatpixel concentration for each color is improved.

For example, in the spectrum of FIG. 8, with respect to light of awavelength band of 450 nm which is blue light, QE of the secondphotosensitive cell 112 corresponding to the blue pixel B is 2.75, andthe total QE, that is, QE of the first to fourth photosensitive cells111, 112, 113, and 114, is 3.4 (2.75+0.4+0.25), and the ratio occupiedby the QE in the second photosensitive cell 112 is 80.9%. In thespectrum of FIG. 13, with respect to the light of the wavelength band of450 nm which is the blue light, the QE of the second photosensitive cell112 corresponding to the blue pixel B is 1.97, and a ratio occupied bythe QE in the total QE of 2.20 (1.97+0.17+0.06) may increase to 89.4%.The ratio of the light sensed by the second photosensitive cell 112 inthe light of the wavelength band of 450 nm sensed by the sensorsubstrate 110 may be 89.4%. The ratio of the light sensed by the secondphotosensitive cell 112 in the light of the wavelength band of 450 nmsensed by the sensor substrate 110 including the spectrum shaping layer150 may be 83% to 95%.

As another example, in the spectrum of FIG. 8, with respect to light ofa wavelength band of 540 nm which is green light, QE of the first andfourth photosensitive cells 111 and 114 corresponding to the green pixelG is 1.10, and a ratio occupied by the QE in the total QE of 2.85(1.10+0.47+1.28) is 38.70%. In the spectrum of FIG. 13, with respect tothe light of the wavelength band of 540 nm which is the green light, theQE of the first and fourth photosensitive cells 111 and 114corresponding to the green pixel G is 0.93, and a ratio occupied by theQE in the total QE of 2.10 (0.93+0.42+0.75) may increase to 44.30%. Inaddition, in the spectrum of FIG. 8, with respect to light of awavelength band of 640 nm which is red light, QE of the thirdphotosensitive cell 113 corresponding to the red pixel R is 1.89, and aratio occupied by the QE in the total QE of 3.20 (0.62+0.69+1.89) is59.20%, and in the spectrum of FIG. 13, with respect to the light of thewavelength band of 640 nm which is the red light, QE of the thirdphotosensitive cell 113 corresponding to the red pixel R is 1.84, and aratio occupied by the QE in the total QE of 2.75 (0.60+0.31+1.84) mayincrease to 66.90%. A ratio of the light sensed by the thirdphotosensitive cell 113 in the light of the wavelength band of 640 nmsensed by the sensor substrate 110 is 66.9%. The ratio of the lightsensed by the third photosensitive cell 113 in the light of thewavelength band of 640 nm sensed by the sensor substrate 110 includingthe spectrum shaping layer 150 may be 60% to 75%.

When the wavelengths of light are 450 nm, 540 nm, and 640 nm as anexample, the pixel concentration for each color is summarized in [Table1] and [Table 2] below.

TABLE 1 Pixel concentration for each color when a spectrum shaping layeris not present First and fourth second third photosensitivephotosensitive photosensitive cells cell cell 450 nm 11.8% 80.9% 7.3%540 nm 38.7% 16.5% 44.8% 640 nm 19.3% 21.6% 59.2%

TABLE 2 Pixel concentration for each color when a spectrum shaping layeris present First and fourth second third photosensitive photosensitivephotosensitive cells cell cell 450 nm 7.9% 89.4% 2.8% 540 nm 44.3% 20.2%35.5% 640 nm 21.8% 11.3% 66.9%

As summarized in Table 2, the ratio of the light sensed by the secondphotosensitive cell 112 in the light of the wavelength band of 450 nmsensed by the sensor substrate 110 is equal to or more than 85%. Inaddition, the ratio of the light sensed by the third photosensitive cell113 in the light of the wavelength band of 640 nm sensed by the sensorsubstrate 110 is equal to or more than 60%.

As the color purity and color reproducibility of the image sensor 100are often improved when the pixel concentration for each color isimproved, when the color separating lens array 130 and the spectrumshaping layer 150 are properly combined, the performance of the imagesensor 100 may be improved.

When the structures of the color separating lens array 130 and thespectrum shaping layer 150 are compared, heights of the nanoposts NPincluded in the color separating lens array 130 may be 3 to 50 timeslarger than those of the nanostructures 151 a, 152 a, and 153 a, and thethickness of the color separating lens array 130 may also be 3 to 50times larger than the thickness of the spectrum shaping layer 150.

FIGS. 14A to 14C are diagrams illustrating a spectrum shaping layeraccording to another example embodiment.

In the example embodiments of FIGS. 10A, 11A and 12A, an example inwhich each of the first to third shapers 151, 152, and 153 includes acylindrical nanostructure has been described, but as shown in FIG. 14A,each shaper may include a nanostructure in a quadrangular shape.

In addition, in the example embodiments of FIGS. 10A, 11A and 12A, anexample in which the refractive index of the nanostructure is higherthan the refractive index of the dielectric has been described, but asshown in FIG. 14B, the refractive index of a nanostructure 151 a″ mayalso be lower than the refractive index of a dielectric 151 b″. Forexample, the nanostructure 151 a″ of FIG. 14B may be SiO₂, and thedielectric 151 b″ may be p-Si, A-Si, Si, or Al-plasmonic.

In addition, in the example embodiments of FIGS. 10A, 11A, and 12A, astructure in which the dielectric is a single layer has been describedas an example, but as shown in FIG. 14C, a dielectric 151 b″ may have astructure in which materials having different refractive indices arerepeatedly stacked.

In addition, in the example embodiments of FIGS. 10A, 11A and 12A, astructure having the same diameter of the nanostructures included ineach of the first to third shapers 151, 152 and 153 has been described,but in order to form a desired spectrum, each of the first to thirdshapers 151, 152 and 153 may include nanostructures of different shapes.For example, the first shaper 151 may include two types of cylindershaving different diameters, or may further include a square pillar inaddition to the cylinder.

FIGS. 15A and 15B are schematic cross-sectional views of a pixel arrayaccording to another example embodiment.

The example embodiment of FIGS. 15A and 15B is different from theexample embodiment of FIGS. 4A and 4B in that the pixel array furtherincludes an optical filter layer 170 disposed on the color separatinglens array 130. The optical filter layer 170 may absorb and/or reflectlight of a specific wavelength band before the light is incident on thecolor separating lens array 130 and cause selectively only part of thelight to transmit therethrough. For example, the optical filter layer170 may block ultraviolet and infrared light and cause only light in avisible light band to be transmitted through the optical filter layer170, thereby contributing to improvement of color purity and colorreproducibility of the image sensor 1000.

Among the components of FIGS. 15A and 15B, other components except forthe optical filter layer 170 are similar to those of the embodiments ofFIGS. 4A and 4B, and thus redundant descriptions thereof will beomitted.

FIG. 16A is a schematic cross-sectional view of the optical filter layer170 shown in FIGS. 15A and 15B, and FIG. 16B is a graph showingtransmittance of the optical filter layer 170 for each wavelength.

Referring to FIG. 16A, the optical filter layer 170 may include a firstfilter layer 171 including a first material and a second filter layer172 including a second material having a lower refractive index than thefirst material. The first and second filter layers 171 and 172 may bealternately and repeatedly stacked, and a transmission wavelength of theoptical filter layer 170 may change by changing parameters such asmaterial, thickness, repetitive stacking number of times, etc. of thefirst and second filter layers 171 and 172. For example, the opticalfilter layer 170 may be a structure in which the first filter layer 171having a thickness of 85 nm and a material of TiO₂ and the second filterlayer 172 having a thickness of 125 nm and a material of SiO₂ arealternately stacked 22 times.

Referring to FIG. 16B, the optical filter layer 170 may block light inthe ultraviolet and infrared wavelength bands and cause light in thevisible light band to be transmitted through the optical filter layer170. For example, the transmittance of the optical filter layer 170 withrespect to light having a wavelength of 435 nm to 600 nm may be equal toor more than 0.9, and the transmittance of the optical filter layer 170with respect to light having a wavelength equal to or less than 420 nmor equal to or more than 650 nm may be equal to or less than 0.2. In atransmittance spectrum of the optical filter layer 170, a transmittanceincrease rate in a range of the wavelength of 420 nm to 440 nm may belarger than a transmittance decrease rate in a range of the wavelengthof 600 nm to 650 nm. For example, in the range of the wavelength of 420nm to 440 nm, when the wavelength increases by 20 nm, the transmittancemay increase from 0.20 to 0.95 by equal to or more than 0.75, whereas inthe range of the wavelength of 600 nm to 650 nm, when the wavelengthincreases by 50 nm, the transmittance may decrease from 0.9 to 0.2 by0.7. The transmittance in the range of the wavelength of 420 nm to 440nm may rapidly increase, and the transmittance in the range of 600 nm to650 nm may decrease relatively gently.

FIG. 17 is a diagram illustrating a spectrum showing light incident onthe pixel array 1100 of FIGS. 15A and 15B.

The spectrum of FIG. 17 is different from a spectrum of FIG. 13 in thatthe spectrum is of light passing through the optical filter layer 170described with reference to FIGS. 15A and 15B. An offset of the spectrumof FIG. 17 may decrease compared to the spectrum of FIG. 13. A decreaseof the offset may mean that a range in which QEs of first to thirdspectra S1″, S2″, and S3″ all have values equal to or larger than acertain level decreases. For example, referring to FIG. 13, the QEs ofthe first to third spectra S1′, S2′, and S3′ are equal to or more than0.2 in a range of a wavelength of 520 nm to 550 nm and a range of awavelength equal to or more than 600 nm, whereas referring to FIG. 17, arange in which the QEs of the first to third spectra S1′, S2′, and S3′are equal to more than 0.2 decreases. The decrease of the offset maycontribute to the improvement of color reproducibility of the imagesensor 1000.

In the image sensor 1000 including the pixel array 1100 described above,because light loss caused by a color filter, for example, an organiccolor filter rarely occurs, a sufficient light intensity may be providedto pixels even when sizes of the pixels are reduced. Therefore, anultra-high resolution, ultra-small, and highly sensitive image sensorhaving hundreds of millions of pixels or more may be manufactured. Suchan ultra-high resolution, ultra-small, and highly sensitive image sensormay be employed in various high-performance optical devices orhigh-performance electronic devices. For example, the electronic devicesmay include, for example, smart phones, personal digital assistants(PDAs), laptop computers, personal computers (PCs), a variety ofportable devices, electronic devices, surveillance cameras, medicalcamera, automobiles, Internet of Things (IoT), other mobile ornon-mobile computing devices and are not limited thereto.

In addition to the image sensor 1000, the electronic device may furtherinclude a processor controlling the image sensor, for example, anapplication processor (AP), to drive an operating system or anapplication program through the processor and control a plurality ofhardware or software components, and perform various data processing andoperations. The processor may further include a graphic processing unit(GPU) and/or an image signal processor. When the processor includes theimage signal processor, an image (or video) obtained by the image sensormay be stored and/or output using the processor.

FIG. 18 is a block diagram of an example showing an electronic device1801 including the image sensor 1000 according to an example embodiment.Referring to FIG. 18, in a network environment 1800, the electronicdevice 1801 may communicate with another electronic device 1802 througha first network 1898 (a short-range wireless communication network,etc.) or communicate with another electronic device 1804 and/or a server1808 through a second network 1899 (a remote wireless communicationnetwork, etc.) The electronic device 1801 may communicate with theelectronic device 1804 through the server 1808. The electronic device1801 may include a processor 1820, a memory 1830, an input device 1850,a sound output device 1855, a display apparatus 1860, an audio module1870, a sensor module 1876, an interface 1877, a haptic module 1879, acamera module 1880, a power management module 1888, a battery 1889, acommunication module 1890, a subscriber identification module 1896,and/or an antenna module 1897. The electronic device 1801 may omit some(the display apparatus 1860, etc.) of the components or may furtherinclude other components. One or more of the components may beimplemented as an integrated circuit. For example, the sensor module1876 (a fingerprint sensor, an iris sensor, an illumination sensor,etc.) may be embedded in the display apparatus 1860 (a display, etc.).

The processor 1820 may be configured to execute software (a program1840, etc.) to control one or a plurality of components (hardware orsoftware components) of the electronic device 1801, the components beingconnected to the processor 1820, and to perform various data processingor calculations. As part of the data processing or calculations, theprocessor 1820 may be configured to load a command and/or data receivedfrom other components (the sensor module 1876, the communication module1890, etc.) into the volatile memory 1832, process the command and/orthe data stored in a volatile memory 1832, and store resultant data in anonvolatile memory 1834. The processor 1820 may include a main processor1821 (a central processing unit (CPU), an application processor (AP),etc.) and an auxiliary processor 1823 (a graphics processing unit (GPU),an image signal processor, a sensor hub processor, a communicationprocessor, etc.) which may independently operate or operate with themain processor 1821. The auxiliary processor 1823 may use less powerthan the main processor 1821 and may perform specialized functions.

When the main processor 1821 is in an inactive state (a sleep state),the auxiliary processor 1823 may take charge of an operation ofcontrolling functions and/or states related to one or more components(the display apparatus 1860, the sensor module 1876, the communicationmodule 1890, etc.) from among the components of the electronic device1801, or when the main processor 1821 is in an active state (anapplication execution state), the auxiliary processor 1823 may performthe same operation along with the main processor 1821. The auxiliaryprocessor 1823 (the image signal processor, the communication processor,etc.) may be realized as part of other functionally-related components(the camera module 1880, the communication module 1890, etc.).

The memory 1830 may store various data required by the components (theprocessor 1820, the sensor module 1876, etc.) of the electronic device1801. The data may include, for example, software (the program 1840,etc.), input data and/or output data of a command related to thesoftware. The memory 1830 may include the volatile memory 1832 and/orthe nonvolatile memory 1834. The nonvolatile memory 1834 may include aninternal memory 1836 fixedly mounted in the electronic device 1801 and aremovable external memory 1838.

The program 1840 may be stored in the memory 1830 as software, and mayinclude an operating system 1842, middleware 1844, and/or an application1846.

The input device 1850 may receive a command and/or data to be used bythe components (the processor 1820, etc.) of the electronic device 1801from the outside of the electronic device 1801. The input device 1850may include a microphone, a mouse, a keyboard, and/or a digital pen (astylus pen, etc.).

The sound output device 1855 may output a sound signal to the outside ofthe electronic device 1801. The sound output device 1855 may include aspeaker and/or a receiver. The speaker may be used for a generalpurpose, such as multimedia playing or recording playing, and thereceiver may be used to receive an incoming call. The receiver may becoupled to the speaker as part of the speaker or may be realized as aseparate device.

The display apparatus 1860 may visually provide information to theoutside of the electronic device 1801. The display apparatus 1860 mayinclude a display, a hologram device, or a controlling circuit forcontrolling a projector and a corresponding device. The displayapparatus 1860 may include touch circuitry configured to sense a touchoperation and/or sensor circuitry (a pressure sensor, etc.) configuredto measure an intensity of a force generated by the touch operation.

The audio module 1870 may convert sound into an electrical signal or anelectrical signal into sound. The audio module 1870 may obtain sound viathe input device 1850 or may output sound via the sound output device1855 and/or a speaker and/or a headphone of an electronic device (theelectronic device 1802, etc.) directly or wirelessly connected to theelectronic device 1801.

The sensor module 1876 may sense an operation state (power, temperature,etc.) of the electronic device 1801 or an external environmental state(a user state, etc.) and generate electrical signals and/or data valuescorresponding to the sensed state. The sensor module 1876 may include agesture sensor, a gyro-sensor, an atmospheric sensor, a magnetic sensor,an acceleration sensor, a grip sensor, a proximity sensor, a colorsensor, an infrared (IR) sensor, a biometric sensor, a temperaturesensor, a humidity sensor, and/or an illumination sensor.

The interface 1877 may support one or a plurality of designatedprotocols to be used for the electronic device 1801 to be directly orwirelessly connected to another electronic device (the electronic device1802, etc.). The interface 1877 may include a high-definition multimediainterface (HDMI) interface, a universal serial bus (USB) interface, anSD card interface, and/or an audio interface.

A connection terminal 1878 may include a connector, through which theelectronic device 1801 may be physically connected to another electronicdevice (the electronic device 1802, etc.) The connection terminal 1878may include an HDMI connector, a USB connector, an SD card connector,and/or an audio connector (a headphone connector, etc.).

A haptic module 1879 may convert an electrical signal into a mechanicalstimulus (vibration, motion, etc.) or an electrical stimulus which isrecognizable to a user via haptic or motion sensation. The haptic module1879 may include a motor, a piezoelectric device, and/or an electricalstimulus device.

The camera module 1880 may capture a still image and a video. The cameramodule 1880 may include a lens assembly including one or a plurality oflenses, the image sensor 1000 of FIG. 1, image signal processors, and/orflashes. The lens assemblies included in the camera module 1880 maycollect light emitted from an object, an image of which is to becaptured.

The power management module 1888 may manage power supplied to theelectronic device 1801. The power management module 8388 may be realizedas part of a power management integrated circuit (PMIC).

The battery 1889 may supply power to the components of the electronicdevice 1801. The battery 1889 may include a non-rechargeable primarybattery, rechargeable secondary battery, and/or a fuel battery.

The communication module 1890 may support establishment of direct(wired) communication channels and/or wireless communication channelsbetween the electronic device 1801 and other electronic devices (theelectronic device 1802, the electronic device 1804, the server 1808,etc.) and communication performance through the establishedcommunication channels. The communication module 1890 may include one ora plurality of communication processors separately operating from theprocessor 1820 (an application processor, etc.) and supporting directcommunication and/or wireless communication. The communication module1890 may include a wireless communication module 1892 (a cellularcommunication module, a short-range wireless communication module, aglobal navigation satellite system (GNSS) communication module, and/or awired communication module 1894 (a local area network (LAN)communication module, a power line communication module, etc.). Fromthese communication modules, a corresponding communication module maycommunicate with other electronic devices through a first network 1898(a short-range wireless communication network, such as Bluetooth, WiFidirect, or infrared data association (IrDa)) or a second network 1899 (aremote communication network, such as a cellular network, the Internet,or a computer network (LAN, WAN, etc.)). Various types of communicationmodules described above may be integrated as a single component (asingle chip, etc.) or realized as a plurality of components (a pluralityof chips). The wireless communication module 1892 may identify andauthenticate the electronic device 1801 within the first network 1898and/or the second network 1899 by using subscriber information(international mobile subscriber identification (IMSI), etc.) stored inthe subscriber identification module 1896.

The antenna module 1897 may transmit a signal and/or power to theoutside (other electronic devices, etc.) or receive the same from theoutside. The antenna may include an emitter including a conductivepattern formed on a substrate (a printed circuit board (PCB), etc.). Theantenna module 1897 may include an antenna or a plurality of antennas.When the antenna module 1897 includes a plurality of antennas, anappropriate antenna which is suitable for a communication method used inthe communication networks, such as the first network 1898 and/or thesecond network 1899, may be selected. Through the selected antenna,signals and/or power may be transmitted or received between thecommunication module 1890 and other electronic devices. In addition tothe antenna, another component (a radio frequency integrated circuit(RFIC), etc.) may be included in the antenna module 1897.

One or more of the components of the electronic device 1801 may beconnected to one another and exchange signals (commands, data, etc.)with one another, through communication methods performed amongperipheral devices (a bus, general purpose input and output (GPIO), aserial peripheral interface (SPI), a mobile industry processor interface(MIPI), etc.).

The command or the data may be transmitted or received between theelectronic device 1801 and another external electronic device 1804through the server 1808 connected to the second network 1899. Otherelectronic devices 1802 and 1804 may be electronic devices that arehomogeneous or heterogeneous types with respect to the electronic device1801. All or part of operations performed in the electronic device 1801may be performed by one or a plurality of the other electronic devices1802, 1804, and 1808. For example, when the electronic device 1801 hasto perform a function or a service, instead of directly performing thefunction or the service, the one or a plurality of other electronicdevices may be requested to perform part or all of the function or theservice. The one or a plurality of other electronic devices receivingthe request may perform an additional function or service related to therequest and may transmit a result of the execution to the electronicdevice 1801. To this end, cloud computing, distribution computing,and/or client-server computing techniques may be used.

FIG. 19 is a block diagram showing the camera module 1880 of FIG. 18.Referring to FIG. 19, the camera module 1880 may include a lens assembly1910, a flash 1920, the image sensor 1000 (see FIG. 1), an imagestabilizer 1940, a memory 1950 (a buffer memory, etc.), and/or an imagesignal processor 1960. The lens assembly 1910 may collect light emittedfrom a subject that is a target of image capture. The camera module 1880may include a plurality of lens assemblies 1910, and in this case, thecamera module 1880 may be a dual camera, a 360 degree camera, or aspherical camera. Some of the plurality of lens assemblies 1910 may havethe same lens property (an angle of view, a focal length, AF, a Fnumber, optical zoom, etc.), or may have different lens properties. Thelens assembly 1910 may include a wide-angle lens or a telephoto lens.

The flash 1920 may emit light used to enhance light emitted or reflectedfrom a subject. The flash 1920 may include one or more light emittingdiodes (RGB LED, white LED, infrared LED, ultraviolet LED, etc.), and/ora Xenon Lamp. The image sensor 1000 may be the image sensor 1000described in FIG. 1, and may obtain an image corresponding to thesubject by converting the light emitted or reflected from the subjectand transmitted through the lens assembly 1910 into an electricalsignal. The image sensor 1000 may include one or a plurality of sensorsselected from image sensors having different attributes, such as an RGBsensor, a black and white (BW) sensor, an IR sensor, or a UV sensor.Each of the sensors included in the image sensor 1000 may be implementedas a charged coupled device (CCD) sensor and/or a complementary metaloxide semiconductor (CMOS) sensor.

The image stabilizer 1940 may move one or more lenses included in thelens assembly 1910 or image sensors 1000 in a specific direction inresponse to the movement of the camera module 1880 or the electronicapparatus 1901 including the camera module 1880 or control the operatingcharacteristics of the image sensor 1000 (adjusting read-out timing,etc.) to compensate for a negative influence due to the movement. Theimage stabilizer 1940 may use a gyro sensor or an acceleration sensordisposed inside or outside the camera module 1880 to detect the movementof the camera module 1880 or the electronic apparatus 1801. The imagestabilizer 1940 may be implemented optically.

The memory 1950 may store part or entire data of an image obtainedthrough the image sensor 1000 for a next image processing operation. Forexample, when a plurality of images are obtained at high speed, obtainedoriginal data (Bayer-Patterned data, high-resolution data, etc.) may bestored in the memory 1950, only low-resolution images may be displayed,and then the original data of a selected (a user selection, etc.) imagemay be transmitted to the image signal processor 1960. The memory 1950may be integrated into the memory 1830 of the electronic apparatus 1801,or may be configured as a separate memory that operates independently.

The image signal processor 1960 may perform image processing operationson the image obtained through the image sensor 1000 or the image datastored in the memory 1950. The image processing may include depth mapgeneration, 3D modeling, panorama generation, feature point extraction,image synthesis, and/or image compensation (noise reduction, resolutionadjustment, brightness adjustment, blurring, sharpening, softening,etc.) The image signal processor 1960 may perform control (exposure timecontrol, read-out timing control, etc.) of components (the image sensor1000, etc.) included in the camera module 1880. The image processed bythe image signal processor 1960 may be stored again in the memory 1950for further processing or may be provided to external components (thememory 1830, the display apparatus 1860, the electronic apparatus 1802,the electronic apparatus 1804, the server 1808, etc.) of the cameramodule 1880. The image signal processor 1960 may be integrated into theprocessor 1820 or may be configured as a separate processor thatoperates independently from the processor 1820. When the image signalprocessor 1960 is configured as the processor separate from theprocessor 1820, the image processed by the image signal processor 1960may undergo additional image processing by the processor 1820 and thenbe displayed through the display apparatus 1860.

The electronic apparatus 1801 may include the plurality of cameramodules 1880 having different properties or functions. In this case, oneof the plurality of camera modules 1880 may be a wide-angle camera, andthe other may be a telephoto camera. Similarly, one of the plurality ofcamera modules 1880 may be a front camera and the other may be a rearcamera.

The image sensor 1000 according to the example embodiments may beapplied to the mobile phone or a smartphone 2000 shown in FIG. 20, atablet or a smart tablet 2100 shown in FIG. 21, a digital camera or acamcorder 2200 shown in FIG. 22, a laptop computer 2300 shown in FIG.23, or a television or a smart television 2400 shown in FIG. 24, etc.For example, the smartphone 2000 or the smart tablet 2100 may include aplurality of high-resolution cameras each including a high-resolutionimage sensor. Depth information of objects in an image may be extracted,out condensing of the image may be adjusted, or objects in the image maybe automatically identified by using the high-resolution cameras.

The image sensor 1000 may also be applied to a smart refrigerator 2500shown in FIG. 25, a surveillance camera 2600 shown in FIG. 26, a robot2700 shown in FIG. 27, a medical camera 2800 shown in FIG. 28, etc. Forexample, the smart refrigerator 2500 may automatically recognize food inthe refrigerator by using the image sensor, and may notify the user ofan existence of a certain kind of food, kinds of food put into or takenout, etc. through a smartphone. The surveillance camera 2600 may alsoprovide an ultra-high-resolution image and may allow the user torecognize an object or a person in the image even in dark environment byusing high sensitivity. The robot 2700 may be input to a disaster orindustrial site that a person may not directly access, to provide theuser with high-resolution images. The medical camera 2800 may providehigh-resolution images for diagnosis or surgery, and may dynamicallyadjust a field of view.

The image sensor may also be applied to a vehicle 2900 as shown in FIG.29. The vehicle 2900 may include a plurality of vehicle cameras 2910,2920, 2930, and 2940 arranged on various positions. Each of the vehiclecameras 2910, 2920, 2930, and 2940 may include the image sensoraccording to the example embodiment. The vehicle 2900 may provide adriver with various information about the interior of the vehicle 2900or the periphery of the vehicle 2900 by using the plurality of vehiclecameras 2910, 2920, 2930, and 2940, and may provide the driver with theinformation necessary for the autonomous travel by automaticallyrecognizing an object or a person in the image.

It should be understood that example embodiments described herein shouldbe considered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each exampleembodiment should typically be considered as available for other similarfeatures or aspects in other embodiments. While example embodiments havebeen described with reference to the figures, it will be understood bythose of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeas defined by the following claims.

What is claimed is:
 1. An image sensor comprising: a sensor substratecomprising a first photosensitive cell and a second photosensitive cellwhich are configured to sense light incident on the sensor substrate; acolor separating lens array configured to change a phase of firstwavelength light and a phase of second wavelength light different fromeach other such that the first wavelength light included in lightincident on the color separating lens array travels to the firstphotosensitive cell and the second wavelength light included in thelight incident on the color separating lens array travels to the secondphotosensitive cell; and a spectrum shaping layer comprising: aplurality of nanostructures respectively having a first refractiveindex; and a dielectric material provided between the plurality ofnanostructures and having a second refractive index, wherein thespectrum shaping layer is provided between the sensor substrate and thecolor separating lens array and configured to shape a spectral profileof the light incident on the sensor substrate by reflecting and/orabsorbing portion of light passing through the color separating lensarray.
 2. The image sensor of claim 1, wherein a thickness of the colorseparating lens array is 3 to 50 times larger than a thickness of thespectrum shaping layer.
 3. The image sensor of claim 1, wherein athickness of the color separating lens array is 500 nm to 1500 nm, and athickness of the spectrum shaping layer is 30 nm to 160 nm.
 4. The imagesensor of claim 1, wherein the spectrum shaping layer comprises a firstshaper provided on the first photosensitive cell, and wherein the firstshaper has a transmittance less than 0.5 with respect to light having awavelength equal to or less than 450 nm, and the first shaper has atransmittance equal to or more than 0.5 with respect to light having awavelength equal to or more than 500 nm.
 5. The image sensor of claim 1,wherein the spectrum shaping layer comprises a second shaper provided onthe second photosensitive cell, and wherein the second shaper has atransmittance lower than 0.5 with respect to light having a wavelengthof 650 nm, and the second shaper has a transmittance of equal to or morethan 0.5 with respect to light having a wavelength equal to or less than610 nm.
 6. The image sensor of claim 1, wherein the spectrum shapinglayer comprises a first shaper provided on the first photosensitive celland a second shaper disposed on the second photosensitive cell, andwherein the first shaper comprises a plurality of first nanostructureshaving a first cross-sectional area, and the second shaper comprises aplurality of second nanostructures having a second cross-sectional areathat is larger than the first cross-sectional area.
 7. The image sensorof claim 6, wherein each of the plurality of first nanostructures andeach of the plurality of second nanostructures have a cylinder shape ora square pillar shape.
 8. The image sensor of claim 6, wherein thesecond cross-sectional area is 4 to 10 times larger than the firstcross-sectional area.
 9. The image sensor of claim 1, wherein thespectrum shaping layer comprises a first shaper provided on the firstphotosensitive cell and a second shaper disposed on the secondphotosensitive cell, and wherein the first shaper comprises a pluralityof first nanostructures arranged at a first pitch, and the second shapercomprises a plurality of second nanostructures arranged at a secondpitch.
 10. The image sensor of claim 9, wherein the second pitch is 2 to6 times larger than the first pitch.
 11. The image sensor of claim 1,wherein the sensor substrate further comprises a third photosensitivecell and a fourth photosensitive cell sensing light, and wherein thecolor separating lens array is configured to change the phase of thefirst wavelength light, the phase of the second wavelength light, and aphase of third wavelength light different from each other such that thefirst wavelength light travels to the first photosensitive cell and thefourth photosensitive cell and the third wavelength light travels to thethird photosensitive cell.
 12. The image sensor of claim 11, wherein thespectrum shaping layer comprises a third shaper provided on the thirdphotosensitive cell, and wherein the third shaper has a transmittancelower than 0.5 with respect to light having a wavelength equal to orless than 500 nm, and the third shaper has a transmittance equal to ormore than 0.5 with respect to light having a wavelength equal to or morethan 600 nm.
 13. The image sensor of claim 11, wherein the spectrumshaping layer comprises a first shaper provided on the firstphotosensitive cell and the fourth photosensitive cell, a second shaperprovided on the second photosensitive cell, and a third shaper providedon the third photosensitive cell, and wherein the first shaper comprisesa plurality of first nanostructures respectively having a firstcross-sectional area, the second shaper comprises a plurality of secondnanostructures respectively having a second cross-sectional area that islarger than the first cross-sectional area, and the third shapercomprises a plurality of third nanostructures respectively having athird cross-sectional area that is larger than the first cross-sectionalarea and less than the second cross-sectional area.
 14. The image sensorof claim 13, wherein each of the plurality of first nanostructures, eachof the plurality of second nanostructures, and each of the plurality ofthird nanostructures has a cylinder shape or a square pillar shape. 15.The image sensor of claim 11, wherein the spectrum shaping layercomprises a first shaper provided on the first photosensitive cell andthe fourth photosensitive cell, a second shaper provided on the secondphotosensitive cell, and a third shaper provided on the thirdphotosensitive cell, and wherein the first shaper comprises a pluralityof first nanostructures arranged at a first pitch, the second shapercomprises a plurality of second nanostructures arranged at a secondpitch that is larger than the first pitch, and the third shapercomprises a plurality of third nanostructures arranged at a third pitchthat is larger than the first pitch and less than the second pitch. 16.The image sensor of claim 11, wherein a ratio of light sensed by thesecond photosensitive cell is equal to or more than 85% with respect tolight having a wavelength of 450 nm that is sensed by the sensorsubstrate.
 17. The image sensor of claim 11, wherein a ratio of lightsensed by the third photosensitive cell is equal to or more than 60%with respect to light having a wavelength of 640 nm that is sensed bythe sensor substrate.
 18. The image sensor of claim 1, furthercomprising an optical filter layer provided on the color separating lensarray and configured to block infrared or ultraviolet light among thelight incident on the color separating lens array.
 19. The image sensorof claim 18, wherein the optical filter layer comprises a first filterlayer having a first refractive index and a second filter layer providedon the first filter layer and having a second refractive index.
 20. Theimage sensor of claim 1, wherein a transmission area ratio of thespectrum shaping layer is 40% to 90% with respect to light of awavelength of 400 nm to 700 nm.
 21. The image sensor of claim 1, whereina transmission area ratio of the spectrum shaping layer is 50% to 80%with respect to light of a wavelength of 400 nm to 700 nm.
 22. The imagesensor of claim 1, wherein the spectrum shaping layer comprises a firstshaper provided on the first photosensitive cell, and wherein atransmission area ratio of the first shaper is 50% to 80% with respectto light of a wavelength of 400 nm to 700 nm.
 23. An electronic devicecomprising: an image sensor configured to convert an optical image intoan electrical signal; and a processor configured to control an operationof the image sensor, and store and output a signal generated by theimage sensor, wherein the image sensor comprises: a sensor substratecomprising a first photosensitive cell and a second photosensitive cellwhich are configured to sense light incident on the sensor substrate; acolor separating lens array configured to change a phase of firstwavelength light and a phase of second wavelength light different fromeach other such that the first wavelength light included in lightincident on the color separating lens array travels to the firstphotosensitive cell and the second wavelength light included in thelight incident on the color separating lens array travels to the secondphotosensitive cell; and a spectrum shaping layer comprising a pluralityof nanostructures respectively having a first refractive index and adielectric material provided between the plurality of nanostructures andrespectively having a second refractive index, the spectrum shapinglayer being provided between the sensor substrate and the colorseparating lens array and configured to shape a spectral profile of thelight incident on the sensor substrate by reflecting and/or absorbingportion of light passing through the color separating lens array. 24.The electronic device of claim 23, wherein a thickness of the colorseparating lens array is 3 to 50 times larger than a thickness of thespectrum shaping layer.
 25. The electronic device of claim 23, wherein athickness of the color separating lens array is 500 nm to 1500 nm, and athickness of the spectrum shaping layer is 30 nm to 160 nm.
 26. Theelectronic device of claim 23, wherein the spectrum shaping layercomprises a first shaper provided on the first photosensitive cell, andwherein the first shaper has a transmittance less than 0.5 with respectto light having a wavelength equal to or less than 450 nm, and the firstshaper has a transmittance equal to or more than 0.5 with respect tolight having a wavelength equal to or more than 500 nm.
 27. Theelectronic device of claim 23, wherein the spectrum shaping layercomprises a second shaper provided on the second photosensitive cell,and wherein the second shaper has a transmittance lower than 0.5 withrespect to light having a wavelength of 650 nm, and the second shaperhas a transmittance of equal to or more than 0.5 with respect to lighthaving a wavelength equal to or less than 610 nm.
 28. The electronicdevice of claim 23, wherein the spectrum shaping layer comprises a firstshaper provided on the first photosensitive cell and a second shaperprovided on the second photosensitive cell, and wherein the first shapercomprises a plurality of first nanostructures respectively having afirst cross-sectional area, and the second shaper comprises a pluralityof second nanostructures respectively having a second cross-sectionalarea that is larger than the first cross-sectional area.
 29. Theelectronic device of claim 28, wherein each of the plurality of firstnanostructures and each of the plurality of second nanostructures have acylinder shape or a square pillar shape.
 30. The electronic device ofclaim 28, wherein the second cross-sectional area is 4 to 10 timeslarger than the first cross-sectional area.
 31. The electronic device ofclaim 23, wherein the spectrum shaping layer comprises a first shaperprovided on the first photosensitive cell and a second shaper providedon the second photosensitive cell, and wherein the first shapercomprises a plurality of first nanostructures arranged at a first pitch,and the second shaper comprises a plurality of second nanostructuresarranged at a second pitch.
 32. The electronic device of claim 31,wherein the second pitch is 2 to 6 times larger than the first pitch.33. The electronic device of claim 23, wherein the sensor substratefurther comprises a third photosensitive cell and a fourthphotosensitive cell sensing light, and wherein the color separating lensarray is configured to change the phase of the first wavelength light,the phase of the second wavelength light, and a phase of thirdwavelength light different from each other such that the firstwavelength light travels to the first photosensitive cell and the fourthphotosensitive cell and the third wavelength light travels to the thirdphotosensitive cell.
 34. The electronic device of claim 33, wherein thespectrum shaping layer comprises a third shaper provided on the thirdphotosensitive cell, and wherein the third shaper has a transmittancelower than 0.5 with respect to light having a wavelength equal to orless than 500 nm, and the third shaper has a transmittance equal to ormore than 0.5 with respect to light having a wavelength equal to or morethan 600 nm.
 35. The electronic device of claim 33, wherein the spectrumshaping layer comprises a first shaper provided on the firstphotosensitive cell and the fourth photosensitive cell, a second shaperprovided on the second photosensitive cell, and a third shaper providedon the third photosensitive cell, and wherein the first shaper comprisesa plurality of first nanostructures respectively having a firstcross-sectional area, the second shaper comprises a plurality of secondnanostructures respectively having a second cross-sectional area that islarger than the first cross-sectional area, and the third shapercomprises a plurality of third nanostructures respectively having athird cross-sectional area that is larger than the first cross-sectionalarea and less than the second cross-sectional area.
 36. The electronicdevice of claim 35, wherein each of the plurality of firstnanostructures, each the of the plurality of second nanostructures, andeach of the plurality of third nanostructures has a cylinder shape or asquare pillar shape.
 37. The electronic device of claim 33, wherein thespectrum shaping layer comprises a first shaper provided on the firstphotosensitive cell and the fourth photosensitive cell, a second shaperprovided on the second photosensitive cell, and a third shaper providedon the third photosensitive cell, and wherein the first shaper comprisesa plurality of first nanostructures arranged at a first pitch, thesecond shaper comprises a plurality of second nanostructures arranged ata second pitch that is larger than the first pitch, and the third shapercomprises a plurality of third nanostructures arranged at a third pitchthat is larger than the first pitch and less than the second pitch. 38.The electronic device of claim 33, wherein a ratio of light sensed bythe second photosensitive cell is equal to or more than 85% with respectto light having a wavelength of 450 nm that is sensed by the sensorsubstrate.
 39. The electronic device of claim 33, wherein a ratio oflight sensed by the third photosensitive cell is equal to or more than60% with respect to light having a wavelength of 640 nm that is sensedby the sensor substrate.
 40. The electronic device of claim 23, furthercomprising an optical filter layer provided on the color separating lensarray, the optical filter layer being configured to block infrared orultraviolet light among the light incident on the color separating lensarray.
 41. The electronic device of claim 40, wherein the optical filterlayer comprises a first filter layer having a first refractive index anda second filter layer provided on the first filter layer and having asecond refractive index.
 42. The electronic device of claim 23, whereina transmission area ratio of the spectrum shaping layer is 40% to 90%with respect to light of a wavelength of 400 nm to 700 nm.
 43. Theelectronic device of claim 23, wherein a transmission area ratio of thespectrum shaping layer is 50% to 80% with respect to light of awavelength of 400 nm to 700 nm.
 44. The electronic device of claim 23,wherein the spectrum shaping layer comprises a first shaper provided onthe first photosensitive cell, and wherein a transmission area ratio ofthe first shaper is 50% to 80% with respect to light of a wavelength of400 nm to 700 nm.
 45. An image sensor comprising: a sensor substratecomprising a first photosensitive cell and a second photosensitive cellwhich are configured to sense light incident on the sensor substrate; acolor separating lens array configured to change a phase of firstwavelength light and a phase of second wavelength light different fromeach other such that the first wavelength light included in lightincident on the color separating lens array travels to the firstphotosensitive cell and the second wavelength light included in thelight incident on the color separating lens array travels to the secondphotosensitive cell; a spectrum shaping layer comprising a plurality ofnanostructures respectively having a first refractive index and adielectric material disposed between the plurality of nanostructures andrespectively having a second refractive index, the spectrum shapinglayer being disposed between the sensor substrate and the colorseparating lens array and configured to shape a spectral profile of thelight incident on the sensor substrate by reflecting and/or absorbingportion of light passing through the color separating lens array; and anoptical filter layer disposed on the color separating lens array, theoptical filter layer being configured to block infrared or ultravioletlight among the light incident on the color separating lens array,wherein a thickness of the color separating lens array is greater than athickness of the spectrum shaping layer.